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High-frequency module

A technology of high-frequency modules and module substrates, applied in transmission systems, electrical components, etc., can solve problems such as HBT thermal runaway

Pending Publication Date: 2022-07-01
MURATA MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the condition of the positive feedback is met, it will lead to thermal runaway of HBT

Method used

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  • High-frequency module
  • High-frequency module
  • High-frequency module

Examples

Experimental program
Comparison scheme
Effect test

no. 1 example

[0035] refer to 1A to 5D , the high-frequency module of the first embodiment will be described.

[0036] Figure 1A is a diagram showing the positional relationship of each component of the high-frequency module 20 according to the first embodiment in a plan view, Figure 1B It is a figure which shows typically the cross-sectional structure of the high frequency module 20. FIG. On the module substrate 21 are mounted the semiconductor device 30 , the output matching circuit 60 , the band selection switch 68 , the plurality of duplexers 70 , the low noise amplifier 71 , the antenna switch 72 , and a plurality of other surface mount type passive elements (ie, Surface Mount Parts (SMD)). The semiconductor device 30 includes a first member 31 and a second member 32 bonded to the first member 31 in surface contact. For example, the first member 31 is formed of an elemental semiconductor system, and the second member 32 is formed of a compound semiconductor.

[0037] The first u...

no. 2 example

[0093] Next, refer to Image 6, the high frequency module according to the second embodiment will be described. Below, for and reference 1A to 5D The high-frequency module according to the first embodiment described with reference to the drawings has the same structure, and the description is omitted.

[0094] Image 6 It is a figure which shows the positional relationship in the top view of each component of the high frequency module 20 based on 2nd Example. In the first embodiment ( Figure 1A ), in plan view, the semiconductor device 30 and the band selection switch 68 are arranged at positions opposite to two mutually adjacent edges of the output matching circuit 60, respectively. On the other hand, in the second embodiment, the semiconductor device 30 and the band selection switch 68 are arranged at positions opposite to the two parallel edges of the output matching circuit 60 in plan view. That is, the output matching circuit 60 is arranged at a position sandwiched ...

no. 3 example

[0099] Next, refer to 7A to 8B , the high-frequency module according to the third embodiment will be described. Below, for and reference 1A to 5D The same structure of the high-frequency module according to the first embodiment described in the accompanying drawings is omitted.

[0100] Figure 7A is a diagram showing the positional relationship of each component of the high-frequency module 20 according to the third embodiment in a plan view, Figure 7B It is a figure which shows typically the cross-sectional structure of the high frequency module 20. FIG. In the first embodiment ( Figure 1A , Figure 1B ), the output matching circuit 60 is constituted by an integrated passive device in which a plurality of passive elements are integrated. On the other hand, in the third embodiment, some of the passive elements are formed of the metal pattern provided on the module substrate 21, and the other passive elements are formed of individual surface mount components (ie, surf...

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Abstract

The invention provides a high-frequency module capable of suppressing an increase in signal transmission loss and improving heat dissipation characteristics from a semiconductor device. A semiconductor device including a high-frequency amplifier circuit and a band selection switch are mounted on a module substrate. The output matching circuit includes at least one passive element provided on the module substrate, and is connected between the high-frequency amplifier circuit and the band selection switch. The semiconductor device includes: a first member including a semiconductor portion of an elemental semiconductor system; and a second member which is bonded to the first member so as to be in surface contact with the first member and in which a high-frequency amplifier circuit including a semiconductor element of a compound semiconductor system is formed. In plan view, the semiconductor device is disposed in the vicinity of the output matching circuit, and the output matching circuit is disposed in the vicinity of the band selection switch.

Description

technical field [0001] The present invention relates to a high frequency module. Background technique [0002] An RF front-end module that integrates transmission and reception functions of high-frequency signals is incorporated into electronic equipment used for mobile communication, satellite communication, and the like. The RF front-end module includes: a monolithic microwave integrated circuit element (MMIC) with a high-frequency amplification function, a control IC for controlling the high-frequency amplification circuit, a switch IC, a duplexer, and the like. [0003] Patent Document 1 described below discloses a high-frequency module miniaturized by stacking a control IC on an MMIC. The high-frequency module disclosed in Patent Document 1 includes an MMIC mounted on a module substrate, and a control IC stacked on the MMIC. The electrodes of the MMIC, the electrodes of the control IC, and the electrodes on the module substrate are electrically connected by wire bondi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04B1/40
CPCH04B1/40H04B1/0057H04B1/006H04B1/04
Inventor 后藤聪吉见俊二佐俣充则
Owner MURATA MFG CO LTD