Semiconductor structure and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, transistors, electrical components, etc., can solve problems affecting MOSFET conductivity, threshold voltage reduction, etc., to improve inverse narrow width effect, threshold voltage stability, doping small loss effect
Active Publication Date: 2022-07-05
晶芯成(北京)科技有限公司 +1
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Problems solved by technology
At present, due to the application of the shallow trench isolation process, there will be a problem that the threshold voltage will decrease with the narrowing of the channel width. For details, please refer to the invention with the publication number CN104425338A, which will affect the conductivity of the MOSFET
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[0055] The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative efforts shall fall within the protection scope of the present invention.
[0056] Metal-oxide-semiconductor field-effect transistors are widely used in analog and digital circuits. In a metal-oxide-semiconductor field-effect transistor, when the transistor transitions from depletion to inversion, it experiences a state in which the electron concentration on the silicon surface is equal to the hole concentration. At this time, the metal-oxide-semiconductor field-effect transistor is in a critical conduction s...
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The invention relates to the field of semiconductor manufacturing, and discloses a semiconductor structure and a manufacturing method thereof.The manufacturing method at least comprises the steps that a substrate is provided, and a shallow trench isolation structure is formed on the substrate; first ions are injected into the substrate to form a well region, and the well region comprises a high-voltage region and a low-voltage region; oxidizing the surface layers of the high-pressure area and the low-pressure area to form a high-degree oxidation area and a low-degree oxidation area; forming grid electrodes in the high-degree oxidation region and the low-degree oxidation region; second ions are injected into the well region, a first doped region and second doped regions are formed, the first doped region is located in the coverage region of the grid electrode, and the second doped regions are located on the two sides of the grid electrode; and injecting third ions into the second doped region to form a source region and a drain region. The invention provides a semiconductor structure and a manufacturing method thereof. The reverse narrow width performance of the semiconductor structure can be improved.
Description
technical field [0001] The invention belongs to the field of semiconductor manufacturing, and particularly relates to a semiconductor structure and a manufacturing method thereof. Background technique [0002] In the device process of metal oxide semiconductor field effect transistor (Metal Oxide Semiconductor Field Effect Transistor, MOSFET for short), in the transfer characteristic curve, the input voltage corresponding to the midpoint of the turning region where the output current changes sharply with the change of the input voltage is called the input voltage. threshold voltage. Threshold voltage is one of the important parameters affecting the conduction efficiency of MOSFET. At present, due to the application of the shallow trench isolation process, there is a problem that the threshold voltage decreases with the narrowing of the channel width. For details, please refer to the invention with the publication number CN104425338A, which will affect the conductivity of th...
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IPC IPC(8): H01L21/8234H01L27/088
CPCH01L21/823493H01L21/823418H01L21/823481H01L27/088
Inventor 郑大燮汪常亮汪文婷
Owner 晶芯成(北京)科技有限公司