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Silicon carbide junction barrier Schottky diode and preparation method thereof

A junction barrier Schottky and silicon carbide technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of increased device costs and expensive silicon carbide wafers, etc., to save area and reduce The effect of material cost

Pending Publication Date: 2022-07-05
SHENZHEN GOKE TECH INC LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, since the cell layer of JBS uses silicon carbide wafers, and silicon carbide wafers are expensive, the above method leads to an increase in device cost

Method used

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  • Silicon carbide junction barrier Schottky diode and preparation method thereof
  • Silicon carbide junction barrier Schottky diode and preparation method thereof
  • Silicon carbide junction barrier Schottky diode and preparation method thereof

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Embodiment Construction

[0046] The following describes in detail the embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals refer to the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary, only used to explain the present invention, and should not be construed as a limitation of the present invention.

[0047] In the description of the present invention, it should be understood that the azimuth description, such as the azimuth or position relationship indicated by up, down, front, rear, left, right, etc., is based on the azimuth or position relationship shown in the drawings, only In order to facilitate the description of the present invention and simplify the description, it is not indicated or implied that the indicated device or element must have a particular orientation, be construc...

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Abstract

The invention discloses a silicon carbide junction barrier Schottky diode and a preparation method thereof. The silicon carbide junction barrier Schottky diode comprises a first metal layer, a substrate layer, a buffer layer, a cellular layer, a transition layer, a terminal layer, a charge diffusion layer and a second metal layer. The charge diffusion layer is formed by injecting nitrogen ions, the cellular layer, the transition layer and the terminal layer are formed by injecting aluminum ions, and the concentration of the nitrogen ions in the silicon carbide junction barrier Schottky diode is smaller than that of the aluminum ions in the silicon carbide junction barrier Schottky diode. Therefore, according to the silicon carbide junction barrier Schottky diode provided by the embodiment of the invention, the forward conduction capability of the diode is improved while the area of the diode is the same and the breakdown voltage is not changed, so that the area of the diode is saved, and the material cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductor power devices, in particular to a silicon carbide junction barrier Schottky diode and a preparation method thereof. Background technique [0002] At present, silicon carbide junction barrier Schottky diodes (JBS) have become the focus of researchers in related fields due to their advantages of fast turn-off speed, reduced forward voltage, high breakdown voltage and small reverse leakage. [0003] In the related art, the forward conduction capability of JBS is improved by increasing the area of ​​the JBS cell layer. However, since the cell layer of the JBS uses a silicon carbide wafer, and the silicon carbide wafer is expensive, the above method leads to an increase in the cost of the device. SUMMARY OF THE INVENTION [0004] The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention proposes a silicon carbide junction ba...

Claims

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Application Information

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IPC IPC(8): H01L29/872H01L29/36H01L21/329
CPCH01L29/872H01L29/36H01L29/6606
Inventor 刘旭杨承晋刘涛兰华兵刘勇强钟炜
Owner SHENZHEN GOKE TECH INC LTD
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