Solar cell anti-reflection film and preparation method and application thereof

A technology of solar cells and anti-reflection coatings, applied in the field of solar cells, can solve the problems of high performance requirements of photoresist against strong acid corrosion, difficulty in removing glue, and lower refractive index, so as to facilitate battery performance testing and interconnection Welding, reducing the risk of damage and process difficulty, the effect of low reflectivity

Active Publication Date: 2022-07-08
ZHONGSHAN DEHUA CHIP TECH CO LTD
View PDF10 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the need to corrode with hydrofluoric acid, the photoresist has high requirements on the performance of strong acid corrosion resistance, and this type of photoresist is more difficult to remove than ordinary photoresist, and it is easy to have the problem of residue after removal
[0006](3) Since it is more difficult to remove the photores

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Solar cell anti-reflection film and preparation method and application thereof
  • Solar cell anti-reflection film and preparation method and application thereof
  • Solar cell anti-reflection film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0081] This embodiment is a solar cell anti-reflection film, which is formed by stacking the following film layers in sequence:

[0082] At a wavelength of 550 nm, the inorganic layer 102 (TiO 2 Floor);

[0083] At a wavelength of 550 nm, a photoresist layer 103 with a refractive index of 1.6 and a thickness of 102 nm (SU8 photoresist (SU8-2000.5 photoresist from Micro Chem, USA) layer).

Embodiment 2

[0085] This embodiment is a solar cell anti-reflection film, which is formed by stacking the following film layers in sequence:

[0086] At a wavelength of 550 nm, the inorganic layer 102 (TiO 2 Floor);

[0087] At a wavelength of 550 nm, a photoresist layer 103 with a refractive index of 1.6 and a thickness of 90 nm (SU8 photoresist (SU8-2000.5 photoresist from Micro Chem, USA) layer).

Embodiment 3

[0089] The present embodiment is the preparation method of the solar cell anti-reflection film in the embodiment 1, which is composed of the following steps:

[0090] S1, using the method of electron beam evaporation (evaporation temperature 220 ℃, evaporation initial vacuum value 8 × 10 -6 Torr, evaporation rate 0.2nm / s), an inorganic layer 102 (TiO2) with a thickness of 68nm was evaporated on the substrate 2 film), when the wavelength is 550nm, its refractive index is 2.35.

[0091] S2. Coat the surface of the inorganic layer 102 with photoresist (SU8 photoresist), and after exposure, bake in an oven at 200° C. for 30 minutes to completely vitrify the SU8 photoresist. The vitrified photoresist has a thickness of 102 nm and a refractive index of 1.6 at a wavelength of 550 nm.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to view more

Abstract

The invention relates to a solar cell anti-reflection film and a preparation method and application thereof, and belongs to the technical field of solar cells. The solar cell anti-reflection film comprises an inorganic layer and a photoresist layer which are stacked in sequence, the refractive index of the inorganic layer is 2.3 to 2.4; the refractive index of the photoresist layer is 1.55 to 1.65; the thickness of the inorganic layer is 65 nm to 75 nm; the thickness of the photoresist layer ranges from 90 nm to 110 nm. The thickness and refractive index of the inorganic layer and the photoresist layer are controlled, so that the reflectivity of the anti-reflection film is controlled, and finally the anti-reflection film with low reflectivity is obtained.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and particularly relates to an antireflection film for solar cells and a preparation method and application thereof. Background technique [0002] Each junction cell of the multi-junction gallium arsenide solar cell absorbs energy in a specific solar spectrum band, and has the advantage of high conversion efficiency. Since the multi-junction GaAs solar cell has the characteristics of wide spectral absorption (with absorption in the range of 300nm to 1800nm), it is necessary to prepare an antireflection coating layer with low reflectivity for the wavelength of 300nm to 1800nm ​​on the cell surface (for Three-junction GaAs solar cells, due to the surplus current of the bottom cell, the main absorption band of the middle cell and the top cell is 450nm ~ 900nm; therefore, the anti-reflection coating layer generally optimizes the reflectivity of the above-mentioned bands), thereby effectively impr...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L31/0216H01L31/0687H01L31/18
CPCH01L31/02168H01L31/0687H01L31/18Y02P70/50
Inventor 肖祖峰丁亮黄滔黄嘉敬黄嘉明梁福盛
Owner ZHONGSHAN DEHUA CHIP TECH CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap