Double-waveguide semiconductor laser structure with Al component and preparation method thereof

Abstract

The invention relates to the technical field of semiconductor optoelectronics. The invention provides a double-waveguide semiconductor laser structure with an Al component and a preparation method of the double-waveguide semiconductor laser structure, in order to solve the problems that carrier loss of a waveguide layer of a single-waveguide structure with the Al component gradually changing in the forward direction is large, a far-field divergence angle of a reverse gradually changing structure is small, internal loss is serious, and threshold current and working voltage of a 980 nm semiconductor laser are increased due to carrier loss and leakage, and the invention provides the double-waveguide semiconductor laser structure with the Al component and the preparation method of the double-waveguide semiconductor laser structure. According to the double-waveguide structure, the Al component of the waveguide in the waveguide layer gradually changes in the forward direction, the Al component of the outer waveguide gradually changes in the reverse direction, the limiting capacity of carriers in an active area is improved through the inner waveguide structure gradually changing in the forward direction, and the limiting capacity of carriers in the waveguide layer is improved through the outer waveguide structure gradually changing in the reverse direction. And non-radiative recombination and leakage current are reduced, so that series resistance and working voltage of the laser are reduced, and output power and electro-optical conversion efficiency of the laser are improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor optoelectronics, and more particularly, to a dual-waveguide semiconductor laser structure with Al composition and a preparation method thereof. Background technique [0002] The waveguide layer is an important part of the 980 nm semiconductor laser and plays a key role in the output characteristics of the laser. The waveguide structure design generally adopts a single waveguide structure with fixed Al composition, but this structure has a relatively weak confinement ability on carriers and optical fields, which increases the carrier loss and increases the number of higher-order modes. On the basis of a single waveguide with a fixed Al composition, a single waveguide structure with graded Al composition is proposed. The single-waveguide structure with a forward gradient of Al composition improves the carrier confinement capability of the active region, but for the wide waveguide structure, t...

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Problems solved by technology

However, for the waveguide with reverse gradient of Al composition, it is easy to cause the carrier concentration in the active region to be too high, and there is a serious mismatch in the potential near the active region, resulting in serious carrier leakage; for the structure with positive Al composition gradient, although Its carrier confinement ability is better than reverse tapered waveguide, but the carrier concentration in the active area is still high, and the carrier confinement ability is weak

The loss and leakage of carriers lead to an increase in the threshold current and operating voltage of 980 nm semiconductor lasers

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