Read-write separated 12T TFET SRAM unit circuit

Abstract

The invention discloses a 12T TFET (Transistor Field Effect Transistor) SRAM (Static Random Access Memory) unit circuit with separated read and write, which comprises eight NTFET (Non-Transient Field Effect Transistor) and four PTFET (Transient Transient Field Effect Transistor), the PTFET P3 and the NTFET N3 form a phase inverter, and the PTFET P4 and the NTFET N4 form another phase inverter; the PTFET transistors P1 and P2 are used as pull-up circuit structures during write operation; nTFET transistors N1, N2, N5 and N6 form a write circuit part, so that the problem of positive bias leakage current caused by positive bias voltage when the TFET is used as an SRAM (Static Random Access Memory) transmission tube can be solved; and the NTFET transistors N7 and N8 form a reading circuit part. The circuit not only improves the writing capability of the SRAM unit, but also eliminates the problem of forward bias leakage current leakage when the TFET is used as a transmission transistor of the SRAM unit.

Description

technical field [0001] The invention relates to the technical field of integrated circuit design, in particular to a 12T TFET (12-tube tunneling field effect transistor) SRAM cell circuit with read-write separation. Background technique [0002] With the advent of the fourth industrial revolution, people's demand for low power consumption of integrated circuits has become more and more intense. MOSFET devices constitute an important part of digital integrated circuit design and analog integrated circuit design. However, with the development of integrated circuit process nodes, some shortcomings of MOSFETs in ultra-low power circuits make it difficult to obtain satisfactory results, because as the feature size of MOSFETs is scaled down, the rules continue to decrease, resulting in sub-threshold swings. The performances such as amplitude and current switching ratio deteriorate, and the static power consumption of the Static Random-Access Memory (SRAM) composed of it is relati...

AI Technical Summary

Problems solved by technology

However, with the development of integrated circuit process nodes, some shortcomings of MOSFETs in ultra-low power circuits make it difficult to obtain satisfactory results, because as the feature size of MOSFETs continues to decrease with the scaling down rule, resulting in its subthreshold swing Amplitude, current switching ratio and other performance deterioration, the static random-access memory (Static Random-Access Memory, SRAM) composed of it has high static power consumption, which hinders its application in low-power devices

In addition, the subthreshold swing of MOSFET at room temperature is theoretically difficult to be less than 60mv / decade

In microprocessors, static random access memory (SRAM) occupies more than 50% of the chip area and consumes most of the static power consumption of the processor, although many methods for reducing SRAM at subthreshold voltages have been widely proposed. However, due to the above-mentioned shortcomings of MOSFETs, it is still very limited to further reduce static power consumption under sub-threshold operating voltages.

[0003] Compared with MOSFETs, tunneling field effect transistors TFETs have broad prospects for replacing MOSFETs due to their lower sub-threshold swing and higher switching ratio. However, in the existing technical solutions, due to the unidirectional When it is used as the pass transistor of SRAM, as the operating voltage increases, the forward bias leakage current of TFET may cause the static power consumption of SRAM to increase by an order of magnitude

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