Preparation method of trench gate field effect transistor

A technology of field effect transistors and trench gates, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve the problems of interdiffusion of ions in the middle gate electrode and the well region, reduce the preparation steps, simplify the process, Avoid the effect of ion diffusion

Pending Publication Date: 2022-07-15
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for preparing a trench gate field effect transistor, so as to solve the problem that ion interdiffusion easily occurs between the gate electrode and the well region in the existing trench gate field effect transistor

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  • Preparation method of trench gate field effect transistor
  • Preparation method of trench gate field effect transistor
  • Preparation method of trench gate field effect transistor

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preparation example Construction

[0029] In view of this, the present invention provides a method for fabricating trench gate field effect transistors. For details, please refer to figure 1 As shown, the preparation method includes the following steps.

[0030] Step S100, forming a gate trench in a substrate, and forming a gate oxide layer and a gate electrode, the gate oxide layer covering the inner wall of the gate trench and the top surface of the substrate, the A gate electrode fills the gate trench.

[0031] Step S200, etch back the gate oxide layer on the top surface of the substrate until the top corner of the gate trench is exposed, and etch the top corner of the gate trench to form a transition section.

[0032] In step S300, an oxide layer is formed at least on the transition section.

[0033] Step S400, performing an ion implantation process to form a well region in the substrate at the side of the gate trench.

[0034] That is, in the method for fabricating the trench gate field effect transisto...

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Abstract

The invention provides a preparation method of a trench gate field effect transistor. By etching the vertex angle of the gate trench to form the smooth transition section, the etching rate at the vertex angle position of the trench in the etching process is reduced, so that the oxide layer on the vertex angle of the trench cannot be quickly consumed and can be retained, and the problem of ion diffusion between the gate electrode and the well region is effectively avoided.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for preparing a trench gate field effect transistor. Background technique [0002] In a trench gate field effect transistor, a gate structure is disposed within a gate trench of a substrate, and a well region and a source region are formed in the substrate on the sides of the gate trench. At present, a method for fabricating a trench gate field effect transistor generally includes: first, forming a gate electrode in a gate trench of a substrate, and then forming a well region in the substrate on the side of the gate trench. However, the trench gate field effect transistor formed according to the current fabrication process is prone to the problem of interdiffusion of ions between the gate electrode and the well region, thereby causing the electrical properties of the device to drift. SUMMARY OF THE INVENTION [0003] The purpose of the present invention is to p...

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/423
CPCH01L29/66621H01L29/4236
Inventor 袁家贵何云肖立
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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