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Copper bonding wire for semiconductor device, and semiconductor device

A bonding wire and semiconductor technology, applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, welding equipment, etc., can solve the problems of reduced production efficiency, increased frequency of package replacement, etc., and achieve the effect of improving storage life

Pending Publication Date: 2022-07-15
NIPPON STEEL CHEMICAL CO LTD +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, there are cases where it is not used up within one week after opening and discarded
In addition, the length of the wire in the package (winding length) is limited to be short. In this case, the frequency of replacement of the package increases, and the production line needs to be stopped every time, etc., which inevitably lowers the production efficiency.

Method used

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  • Copper bonding wire for semiconductor device, and semiconductor device
  • Copper bonding wire for semiconductor device, and semiconductor device
  • Copper bonding wire for semiconductor device, and semiconductor device

Examples

Experimental program
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Embodiment

[0053] Hereinafter, the present invention will be specifically described with reference to examples. However, this invention is not limited to the Example shown below.

[0054] (sample)

[0055] First, a method for preparing a sample will be described. The Cu used as the raw material of the wire has a purity of 99.9 mass % (3N) or more and 99.999 mass % (5N) or more, and the remainder is composed of inevitable impurities. This predetermined-purity copper is manufactured by continuous casting so as to have a wire diameter of several mm. In addition, when adding dopants Sn, P, and Ni, Sn, P, and Ni have a purity of 99% by mass or more, and the remainder is made up of inevitable impurities, or a high-concentration doping of Cu is used. The master alloy of the material. Then, the dopant content is added to the copper of the above-mentioned predetermined purity so that the content of the dopant becomes a target value, and is manufactured by continuous casting so as to have a wi...

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Abstract

Provided is a copper bonding wire having an improved storage life in the atmosphere. Namely, provided is a copper bonding wire for a semiconductor device, the surface of which has a crystal grain boundary density of 0.6 ([mu] m / [mu] m2) or more and 1.6 ([mu] m / [mu] m2) or less.

Description

technical field [0001] The present invention relates to a copper bonding wire for semiconductor devices. Further, it relates to a semiconductor device including the copper bonding wire. Background technique [0002] In a semiconductor device, electrodes formed on a semiconductor chip and electrodes on a lead frame or a substrate are connected by bonding wires. Gold (Au) has been the mainstream material for bonding wires up to now, but copper (Cu) has been substituted mainly for LSI applications (for example, Patent Documents 1 to 3). In addition, for power semiconductor applications, thermal conductivity or The height of the fusing current is expected to be a high-efficiency and reliable substitution for Cu. [0003] After the copper bonding wire is wound into a reel to form a package, the package is sealed with a barrier bag that blocks oxygen, moisture, and the like and shipped. Also, the barrier bag is unsealed before being used for connection between electrodes in the...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22C9/00C22C9/02C22C9/04C22C9/06C22C9/10C22F1/00C22F1/08H01L21/60
CPCC22C9/00H01L2224/45147H01L24/45H01L2224/45015H01L24/43C22F1/08H01L2924/20751H01L2924/20752H01L2924/20753H01L2924/20754H01L2924/20755H01L2924/20756H01L2924/20757H01L2924/20758H01L2924/20759H01L2924/2076H01L2924/01203H01L2924/01204H01L2924/01205H01L2924/01206H01L2924/0105H01L2924/01028H01L2924/01015B23K35/302B23K35/0261H01L21/50
Inventor 大石良小田大造荒木典俊下村光太宇野智裕小山田哲哉
Owner NIPPON STEEL CHEMICAL CO LTD