Method for bonding silicon wafer

Abstract

The invention discloses a method for bonding a silicon wafer. The method comprises the following steps: carrying out graphical processing on a bonding surface of a substrate and a wafer, and plating a metal structure on the bonding surface; a jig and a transparent container are manufactured, the appearance of the jig is basically consistent with that of the substrate and that of the epitaxial wafer, and the substrate and the epitaxial wafer can be fixed in the jig in a double-face alignment mode; aligning the metal structure surfaces of the substrate and the epitaxial wafer and placing the substrate and the epitaxial wafer in a jig; placing the jig on which the chip is placed in a closed container cavity; vacuumizing the cavity to enable the cavity to reach a proper vacuum degree; and the jig is heated and pressurized through the heating and pressurizing device, so that the substrate and the epitaxial wafer are bonded. According to the invention, the jig is arranged, so that the key that whether the substrate and the epitaxial wafer can be aligned and the bonding yield can be fixed can be formed through double-sided alignment and fixation in the jig. According to the heating and pressurizing device, the pressure can be uniformly distributed through the extrusion jig, so that the yield and the productivity of wafer bonding are improved.

Description

technical field [0001] The present invention relates to the technical field of LED chips, and in particular, to a method for bonding silicon wafers. Background technique [0002] The bonding technology of wafers is to bond two homogeneous or heterogeneous wafers into a whole through the force of an external field. With the continuous development of LED technology, the performance requirements of products are getting higher and higher, and the chip structure is also showing more and more diversity. More chip manufacturing processes need to be bonded to achieve better device structures. Wafer bonding The importance of cooperation is also increasing. Existing wafer bonding uses pressure bonding, but because the bonding is not tight and the alignment is difficult, it is difficult to apply uniform pressure, which is likely to cause wafer damage. The existing bonding equipment uses point pressure bonding. The equipment is bonded by a single-point pressing process. Each piece tak...

AI Technical Summary

Problems solved by technology

Existing wafer bonding adopts pressure bonding, but because the bonding is not tight and alignment is difficult, it is difficult to apply uniform pressure and easily cause wafer damage. The existing bonding equipment uses point pressure bonding The equipment uses a single-point pressurization process for bonding, and each piece takes more than 20 minutes, the yield rate is lower than 90%, and the production capacity and yield rate cannot reach a high level

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