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Formation method of semiconductor structure

A semiconductor and conductive structure technology, applied in the field of semiconductor structure formation, can solve the problems such as semiconductor structure performance needs to be improved, achieve the effect of reducing side wall roughness, small side wall roughness, and improving performance

Pending Publication Date: 2022-07-29
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] However, the performance of existing semiconductor structures still needs to be improved

Method used

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  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

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Embodiment Construction

[0025] As mentioned in the background, existing semiconductor structures have poor performance.

[0026] The reasons why the performance and reliability of the semiconductor structure still need to be improved will be described in detail below with reference to the accompanying drawings.

[0027] It should be noted that the "surface" in this specification is used to describe the relative positional relationship in space, and is not limited to whether it is in direct contact.

[0028] Figure 1 to Figure 3 It is a schematic structural diagram of each step of a method for forming a semiconductor structure.

[0029] Please refer to figure 1 , a substrate 100 is provided, and the substrate 100 has several fin structures 101; a gate structure 110 spanning the fin structures 101 is formed on the substrate; A first dielectric layer (not shown) is formed on the sidewall surface of the gate structure 110 .

[0030] Please refer to figure 2 , a conductive structure material layer ...

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Abstract

A forming method of a semiconductor structure comprises the following steps: providing a substrate; forming a conductive structure material layer on the substrate; forming a mask layer on a part of the conductive structure material layer; forming a repairing film on the side wall surface of the mask layer, wherein the roughness of the surface of the repairing film is lower than that of the side wall surface of the mask layer; and etching the conductive structure material layer by taking the mask layer and the repair film as masks so as to form a plurality of conductive structures on the substrate. Therefore, the performance of the semiconductor structure is improved.

Description

technical field [0001] The present invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the rapid development of integrated circuit manufacturing technology, the size of semiconductor devices in the integrated circuit is continuously reduced, so that the operation speed of the entire integrated circuit can be effectively improved. As the size of components is required to be smaller and smaller, correspondingly, the size of the conductive structures formed to be connected to the semiconductor device is smaller and smaller. [0003] However, the performance of existing semiconductor structures still needs to be improved. SUMMARY OF THE INVENTION [0004] The technical problem solved by the present invention is to provide a method for forming a semiconductor structure, so as to improve the performance of the formed semiconductor structure. [0005] In order to solve...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/308
CPCH01L21/3086H01L21/3088
Inventor 张海洋迟帅杰
Owner SEMICON MFG INT (SHANGHAI) CORP