Welding method for ITO target material and Mo backboard

A welding method and target material technology, applied in the direction of climate sustainability, final product manufacturing, metal processing, etc., can solve the problems of low industrial production efficiency and high operation requirements, so as to ensure welding quality, avoid cracking, excellent electrical conductivity and The effect of thermal conductivity

Pending Publication Date: 2022-08-02
KONFOONG MATERIALS INTERNATIONAL CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It improves the welding rate of the target material and the back plate through the setting of multi-layer solder layers

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0073] The present embodiment provides a welding method for an ITO target and a Mo backplane, and the welding method includes the following steps:

[0074] (1) The ITO target material and the Mo backplate are placed on the heating table together, and the ITO target material and the Mo backplate are heated to 190 ℃ through the first temperature rise, the second temperature rise, the third temperature rise, the fourth temperature rise and the fifth temperature rise; The first temperature rise is to raise the temperature to 60°C at 2.5°C / min, and keep for 5 minutes; the second temperature rise is to raise the temperature to 90°C at 2.5°C / min, and keep the temperature for 5 minutes; the third temperature rise is to raise the temperature to 120°C at 2.5°C / min, And keep the temperature for 5min; the fourth temperature rise is to raise the temperature to 150°C at 1.8°C / min, and keep the temperature for 9min; the fifth temperature rise is to raise the temperature to 190°C at 1.8°C / min;...

Embodiment 2

[0083] The present embodiment provides a welding method for an ITO target and a Mo backplane, and the welding method includes the following steps:

[0084](1) The ITO target material and the Mo backplate are placed on the heating table together, and the ITO target material and the Mo backplate are heated to 185 ° C through the first temperature rise, the second temperature rise, the third temperature rise, the fourth temperature rise and the fifth temperature rise; The first temperature rise is to raise the temperature to 55°C at 2°C / min, and keep for 4min; the second temperature rise is to raise the temperature to 85°C at 2°C / min, and keep the temperature for 4min; the third temperature rise is to raise the temperature to 115°C at 2°C / min, And keep the temperature for 4min; the fourth temperature rise is to raise the temperature to 145°C at 1.5°C / min, and keep the temperature for 8min; the fifth temperature rise is to raise the temperature to 185°C at 1.5°C / min;

[0085] When...

Embodiment 3

[0093] The present embodiment provides a welding method for an ITO target and a Mo backplane, and the welding method includes the following steps:

[0094] (1) The ITO target material and the Mo backplate are placed on the heating table together, and the ITO target material and the Mo backplate are heated to 195° C. through the first temperature rise, the second temperature rise, the third temperature rise, the fourth temperature rise and the fifth temperature rise; The first temperature rise is to raise the temperature to 65°C at 3°C / min, and keep for 6 minutes; the second temperature rise is to raise the temperature to 95°C at 3°C / min, and keep the temperature for 6 minutes; the third temperature rise is to raise the temperature to 125°C at 3°C / min, And keep the temperature for 6min; the fourth temperature rise is to raise the temperature to 155°C at 2°C / min, and keep the temperature for 10min; the fifth temperature rise is to raise the temperature to 195°C at 2°C / min;

[00...

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Abstract

The invention relates to a welding method for an ITO target material and a Mo back plate. The welding method comprises the following steps that (1) the ITO target material and the Mo back plate are heated to target temperatures respectively; (2) keeping the temperature of the ITO target material and the Mo back plate unchanged, and infiltrating the welding surface of the ITO target material and the welding surface of the Mo back plate; (3) forming a welding flux groove in the welding surface of the Mo back plate, adding molten welding flux into the welding flux groove, and attaching the ITO target material to the welding flux groove; and (4) a buffer layer is arranged on the surface of the ITO target material, natural cooling is conducted in the pressure applying process, and welding of the ITO target material and the Mo back plate is completed. According to the welding method, the ITO target material and the Mo back plate are not prone to deformation in the welding process, the welding binding rate is high, the welding quality of the ITO target material and the back plate is improved, and the magnetron sputtering quality is guaranteed.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials, and relates to a binding method of a target material and a back plate, in particular to a brazing method of an ITO target material and a Mo back plate. Background technique [0002] The sputtering coating technology usually uses gas discharge to generate gas ionization, and its positive ions bombard the cathode target at a high speed under the action of an electric field, knock out the atoms or molecules of the cathode target, and fly to the surface of the substrate to be plated to deposit a film. At present, sputtering coating technologies include radio frequency sputtering, three-stage sputtering and magnetron sputtering. Among them, magnetron sputtering has become the mainstream coating method due to its higher coating rate compared with other sputtering technologies. [0003] ITO (Indium Tin Oxide) target is the raw material for the production of ITO film. The binding quality ...

Claims

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Application Information

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IPC IPC(8): B23K3/00
CPCB23K3/00Y02P70/50
Inventor 姚力军潘杰王学泽周友平宋阳阳吴东青孙慧芳
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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