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Gallium oxide Schottky diode with P-type diamond inclined mesa junction termination

A technology of Schottky diode and diamond, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of difficult material preparation, slow frequency response of MPS, etc., and achieve low thermal conductivity and smoothness. Potential contours, effects of small fringe electric fields

Pending Publication Date: 2022-08-05
XIDIAN UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

But the frequency response of MPS is slower due to minority carrier injection through ohmic contact
At the same time Ga 2 o 3 JBS devices also have P-type Ga 2 o 3 The problem of difficult material preparation

Method used

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  • Gallium oxide Schottky diode with P-type diamond inclined mesa junction termination
  • Gallium oxide Schottky diode with P-type diamond inclined mesa junction termination
  • Gallium oxide Schottky diode with P-type diamond inclined mesa junction termination

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Embodiment Construction

[0040] The present invention will be described in further detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.

[0041] like figure 1 As shown, a gallium oxide Schottky diode with a P-type diamond inclined mesa junction terminal provided by the present invention includes:

[0042] Top down including anode metal, p-diamond layer, n - -Ga 2 O 3 layer, n + -Ga 2 O 3 layer and cathode metal;

[0043] where n - -Ga 2 O 3 layer, n + -Ga 2 O 3 The layer and the cathode metal layer are in a trapezoidal structure from top to bottom. The inclination angle θ of the trapezoidal structure ranges from 90° to 150°. The P-type diamond layer is on both sides of the trapezoid structure and partially covers the n of the trapezoid structure. - -Ga 2 O 3 layer and n - -Ga 2 O 3 The extendable length on the inclined table top is n - -Ga 2 O 3 The length of the layer slope is 0 to 3 / 4 times, and the anode meta...

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Abstract

The invention discloses a gallium oxide Schottky diode with a P-type diamond inclined mesa junction terminal. The gallium oxide Schottky diode structurally comprises anode metal, a P-type diamond layer, an n-Ga2O3 drift layer, an n +-Ga2O3 layer and cathode metal from top to bottom. The P-type diamond is adopted as the P-type region to avoid the difficult problem of forming P-type gallium oxide in the selected region, meanwhile, the P-type diamond with the optimized extension length grows on the table top with the optimized inclination angle to form the junction terminal structure, and the PN junction at the terminal enables the device to have a smoother equipotential contour and a smaller fringe electric field under reverse bias, so that the device is more compact in structure and more compact in structure. And edge electric field concentration is effectively relieved. High thermal conductivity of diamond is utilized to promote heat dissipation of the device, and the disadvantages of low thermal conductivity and poor heat dissipation capability of gallium oxide can be made up.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a gallium oxide Schottky diode with a P-type diamond inclined mesa junction terminal. Background technique [0002] Ga 2 O 3 is an emerging semiconductor material, given that Ga 2 O 3 The Baliga figure of merit (FOM) far exceeds the figure of merit (FOM) of GaN and 4H-SiC, which has great advantages in realizing high-performance electronic devices. At the same time Ga 2 O 3 The critical breakdown field strength is as high as 8MV / cm, and the electron mobility at room temperature is about 200cm 2 / Vs, these properties make Ga 2 O 3 Become an excellent candidate material for next-generation power electronic devices. [0003] Vertical Ga 2 O 3 Schottky diodes (SBDs) can increase the breakdown voltage of devices by increasing the thickness of the drift layer and reducing the doping concentration of the drift layer, without increasing the lateral size of t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/06H01L23/373H01L21/329
CPCH01L29/872H01L29/0619H01L29/0688H01L29/0661H01L23/3732H01L29/6603
Inventor 张濛贾富春常青原武玫杨凌侯斌宓珉瀚马晓华郝跃
Owner XIDIAN UNIV
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