Gallium oxide Schottky diode with P-type diamond inclined mesa junction termination
A technology of Schottky diode and diamond, which is applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve the problems of difficult material preparation, slow frequency response of MPS, etc., and achieve low thermal conductivity and smoothness. Potential contours, effects of small fringe electric fields
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[0040] The present invention will be described in further detail below with reference to specific embodiments, but the embodiments of the present invention are not limited thereto.
[0041] like figure 1 As shown, a gallium oxide Schottky diode with a P-type diamond inclined mesa junction terminal provided by the present invention includes:
[0042] Top down including anode metal, p-diamond layer, n - -Ga 2 O 3 layer, n + -Ga 2 O 3 layer and cathode metal;
[0043] where n - -Ga 2 O 3 layer, n + -Ga 2 O 3 The layer and the cathode metal layer are in a trapezoidal structure from top to bottom. The inclination angle θ of the trapezoidal structure ranges from 90° to 150°. The P-type diamond layer is on both sides of the trapezoid structure and partially covers the n of the trapezoid structure. - -Ga 2 O 3 layer and n - -Ga 2 O 3 The extendable length on the inclined table top is n - -Ga 2 O 3 The length of the layer slope is 0 to 3 / 4 times, and the anode meta...
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