Semiconductor structure and forming method thereof

Abstract

The invention discloses a semiconductor structure and a forming method thereof. The semiconductor structure comprises a channel structure layer; the source-drain doping layers are located on the two sides of the channel structure layer in the length direction of the channel layers, and the source-drain doping layers and the adjacent channel layers or the source-drain doping layers, the substrate and the channel layers adjacent to the substrate define through grooves; the grid opening is communicated with the through groove, is positioned between the source-drain doping layers and stretches across the channel structure layer; the gate structure is filled in the gate opening and the through groove and comprises a gate function layer surrounding the channel layer and a gate electrode layer which is located on the gate function layer and fills the gate opening and the through groove, the gate function layer exposes the through groove and the side wall of the gate opening, and the gate electrode layer is in contact with the gate opening and the side wall of the through groove. According to the embodiment of the invention, the gate function layer exposes the gate opening and the side wall of the through groove, a larger filling space can be provided for the gate electrode layer, the proportion of the gate electrode layer to the volume of the gate structure is increased, and the problem that the gate resistance is increased due to the reduction of the gate length is solved.

Description

technical field [0001] Embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular, to a semiconductor structure and a method for forming the same. Background technique [0002] With the rapid development of semiconductor manufacturing technology, semiconductor devices are developing in the direction of higher component density and higher integration, and the development trend of semiconductor process nodes following Moore's Law is decreasing. As the most basic semiconductor device, transistors are currently being widely used. Therefore, with the increase in the component density and integration of semiconductor devices, the channel length of transistors has to be continuously shortened in order to adapt to the reduction of process nodes. [0003] In order to better meet the requirement of scaling down the device size, the semiconductor process gradually begins to transition from planar transistors to three-dimensional transisto...

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Problems solved by technology

[0004] However, the performance of current all-around gate transistors still needs to be improved

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