DBR laser and manufacturing method thereof

A manufacturing method and laser technology, applied in lasers, laser parts, semiconductor lasers, etc., can solve the problems of reducing the differential gain of the device and increasing the limited bandwidth, and achieve improved metal adhesion, good high-frequency characteristics, and reduced RC. effect of effect

Pending Publication Date: 2022-08-09
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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Problems solved by technology

However, since the DBR region is a passive material, the differential gain of the device is reduced, which limits the improvement of bandwidth

Method used

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  • DBR laser and manufacturing method thereof
  • DBR laser and manufacturing method thereof
  • DBR laser and manufacturing method thereof

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Embodiment Construction

[0043] In order to make the application purpose, features and advantages of the present application more obvious and understandable, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. The embodiments described above are only a part of the embodiments of the present application, but not all of the embodiments. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative efforts shall fall within the protection scope of this application.

[0044] see Figures 1 to 14 ,in, figure 1 A schematic flowchart of a method for manufacturing a DBR laser provided in an embodiment of the present application, the method mainly includes the following steps:

[0045] S1, epitaxial buffer layer 1 and active layer 2 on the substrate in sequence.

[0046] In an example of the pre...

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Abstract

The invention provides a manufacturing method of a DBR (Distributed Bragg Reflector) laser, which is applied to the technical field of semiconductors and is characterized in that the DBR laser with different grating coupling coefficients is prepared by adopting a process method of stripping low-temperature grown silicon dioxide with an adhesive, reflection spectrums with different grating coupling coefficients can realize a strong DL (Downlink) effect, and meanwhile, the dilution effect of back-and-forth gain is reduced, so that the yield of the DBR laser is improved. The differential gain reduction caused by butt joint of passive materials of a traditional DBR laser is overcome. Meanwhile, photosensitive polyimide is adopted, silicon dioxide dielectric layers are arranged on the upper portion and the lower portion of a polyimide layer, polyimide is only reserved under the P-type electrode Pad, the metal adhesion of the Pad electrode is improved, and the RC effect of the device is reduced. By adopting the photosensitive polyimide, an ICP (Inductively Coupled Plasma) dry etching process in the preparation process is omitted, the process is simplified, and meanwhile, the good high-frequency characteristic of the device is ensured. The invention further discloses a DBR laser.

Description

technical field [0001] The present application relates to the field of semiconductor technology, and in particular, to a DBR laser and a manufacturing method thereof. Background technique [0002] Due to its advantages of low cost, high power, and reduced system complexity, directly modulated lasers have a wide range of applications in the field of optical fiber communication, especially in short-distance communication. A two-segment DBR laser with a distributed Bragg reflection (DBR) mirror is prepared at one end of the active region by docking growth technology. It has the wavelength tunable function, which can realize multi-channel transmission and greatly reduce the system light source. Cost plays an important role in wavelength division multiplexing systems. [0003] In recent years, the use of the DL effect generated by the DBR mirror to expand the modulation bandwidth of the device has also become a research hotspot for high-speed directly modulated lasers. However,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/125
CPCH01S5/125
Inventor 朱旭愿梁松
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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