Manufacturing method of semiconductor device
A semiconductor and device technology, applied in the field of thin-film devices, can solve the problems of increased price, high price, and heat resistance shortcomings.
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example 1
[0109] This example concerns a method for forming island-shaped nickel films on a Corning #7059 glass substrate and then using these films as a starting point to crystallize an amorphous silicon film. This example also provides a method for producing a TFT using the crystalline silicon film obtained above. The island-shaped nickel film can be formed by either of two methods; that is, the island-shaped nickel film is formed on the amorphous silicon film, or under the amorphous silicon film. FIG. 2(A-1) shows a method of providing an island-shaped nickel film under an amorphous silicon film. Fig. 2(A-2) shows a method of forming them on an amorphous silicon film. However, it should be considered in the latter method that the etching of the nickel film formed on the amorphous silicon is carried out as a step after forming the multilayer nickel film. It follows that, albeit in small amounts, the undesired nickel silicide is formed by the reaction between nickel and amorphous sil...
example 2
[0121] This example relates to a method for producing a crystalline silicon film using the constitution described in Example 1, except that the crystallinity of the film is further improved by irradiation with a laser beam at the beginning of crystallization of the film by heating. Except for the laser irradiation step, other steps and conditions were the same as described in Example 1. The symbols and numbers in Fig. 6 correspond to those used in Example 1.
[0122] Referring to Fig. 6, the steps of the method of manufacturing a semiconductor according to this example are described below. Steps (A-1) to (B) are the same as explained in Example 1. After performing the step of FIG. 6(B), the crystal can grow in the lateral direction, and the laser beam is irradiated on it to further improve the crystallization of the silicon film. In this way, a KrF exciter laser was operated to irradiate the previously formed crystalline silicon film with a laser beam with a wavelength of 24...
example 3
[0130] This example relates to a method of introducing a catalytic element into the amorphous silicon film by coating the upper surface of the amorphous silicon film with a solution containing a catalytic element which accelerates the crystallization of the amorphous silicon film. In this example. Nickel was used as the catalytic element. This example is exactly the same as that described in Example 1 except for the method of introducing nickel. The crystallization procedure and subsequent steps were as described in Example 1. corresponds to figure 1 The structure seen from above the substrate is also the same as in Example 1.
[0131] Figure 7 illustrates a fabrication process in sequential steps according to the invention. A layer of silicon oxide film 1B was deposited on a 10×10cm 2 A square Corning #7059 glass substrate 1A, and further, a 1000 Å thick amorphous silicon film 1 was deposited thereon by plasma CVD.
[0132] A silicon oxide film 13 was deposited on the r...
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