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Polymer for chemically amplified resist and resist composition using the same

A technology of chemical amplification and composition, applied in the field of resist composition

Inactive Publication Date: 2004-08-18
DONGJIN SEMICHEM CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, problems with this method are the reaction of micropatterns with the substrate due to the time delay from exposure to PEB processing, thereby causing footing, and the presence of amine components distributed in the air in the processing line. T-head pattern due to environmental pollution

Method used

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  • Polymer for chemically amplified resist and resist composition using the same
  • Polymer for chemically amplified resist and resist composition using the same
  • Polymer for chemically amplified resist and resist composition using the same

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1-7

[0075] Chemically amplified resist composition

[0076]Press the ratio of table 1, use the polymkeric substance represented by the molecular formula 1 prepared in the above-mentioned method, the compound represented by the molecular formula 2-6 as acid generator and propylene glycol monomethyl ether acetate (PGMEA) and ethyl lactate ( EL) to obtain a chemically amplified resist composition.

[0077] [molecular formula 2]

[0078]

[0079] [molecular formula 3]

[0080]

[0081] [Molecular formula 4]

[0082]

[0083] [molecular formula 5]

[0084]

[0085] [molecular formula 6]

[0086]

[0087] The chemically amplified resist composition was spin-coated on a silicon wafer at a speed of 2000 rpm and heated to 100° C. for 90 seconds to form a thin layer of the thickness described in Table 1 . A micropattern mask was mounted on the thin layer, irradiated with a single wavelength of 248 nm, and the thin layer was heated to 110° C. for 90 seconds to induce chem...

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Abstract

The present invention relates to a polymer for a chemically amplified resist and a resist composition using the same. The present invention provides a polymer represented by the Formula (1) and a chemically resist composition for extreme ultraviolet light comprising the same. The chemically amplified resist composition comprising the polymer represented by the formula (1) of the present invention responds to mono wavelength in a micro-lithography process and can embody a micro-pattern of high resolution on a substrate.

Description

technical field [0001] The present invention relates to a polymer for chemically amplified resist and a resist composition comprising the polymer. More specifically, the present invention relates to a novel polymer that can be used in a resist composition that is chemically amplified in a microlithography process suitable for semiconductor microfabrication using a single wavelength as an exposure light source. The resist composition can form a finer pattern on a substrate, and can improve post exposure delay (PED) stability and have high heat resistance to heat generated by dry etching. The present invention also relates to a resist composition using this novel polymer. Background technique [0002] Resist compositions are commonly used in the preparation of large scale integration (LSI) or high resolution lithography. Recently, resist compositions have been required to have high resolution and high sensitivity due to the densification of large-scale integrated circuits. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C08F212/14C08F220/10G03F7/004G03F7/039H01L21/027
CPCG03F7/0045G03F7/039Y10S430/115
Inventor 金德倍金炫辰崔容准郑允植
Owner DONGJIN SEMICHEM CO LTD