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Method for producing semiconductor device

A semiconductor and device technology, applied in the field of manufacturing semiconductor devices

Inactive Publication Date: 2004-11-03
INFINEON TECH AG
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

On the downside, hydrogen intrusion through the lower Pt electrode and hydrogen intrusion into the ferroelectric from the side continue to be possible

Method used

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  • Method for producing semiconductor device
  • Method for producing semiconductor device
  • Method for producing semiconductor device

Examples

Experimental program
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Embodiment Construction

[0022] Two configurations of memory cells known per se are explained with the aid of FIG. 1 to which the method according to the invention can be applied in each case. What is common to both configurations is that the switching transistors S1, S2 in the lower plane are formed directly on the semiconductor substrate 1, and the storage capacitors K1, K2 are arranged in the upper plane, the two planes being connected via the The insulating layers 4 therebetween are separated from each other.

[0023] According to a first configuration ("stacked cell"), the switching transistor S1 and the storage capacitor K1 are mainly arranged directly on top of each other, the lower electrode 31 of the storage capacitor S1 being a contact hole filled with an electrically conductive material. 41 ("plug") is electrically connected to the drain region 21 of the MOS transistor S1,2 through the insulating layer 4.

[0024] According to the second construction scheme ("bias unit (offset cell)"), the...

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Abstract

In a method for fabricating a semiconductor component, a first oxide layer is produced above a substrate. A capacitor is formed above the first oxide layer. The capacitor includes a bottom electrode and a top electrode and a metal-oxide-containing capacitor material layer deposited in between the electrodes. Prior to forming the capacitor, a plasma doping method is used to dope the first oxide layer with a barrier substance which builds up a hydrogen diffusion barrier in the first oxide layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a semiconductor device. wherein a first oxide layer is formed over the substrate; and a capacitor comprising a lower and an upper electrode and a layer of capacitor material comprising metal oxide deposited therebetween is formed over the first oxide layer. Background technique [0002] Conventional microelectronic semiconductor memory devices (DRAMs) are mainly composed of switching transistors and storage capacitors. The stored information is represented here by the state of charge of the storage capacitor. Due to the discharge process the charge status of the (volatile) DRAM memory cells must be constantly updated. [0003] Oxide or nitride layers having a dielectric constant of at most about 8 are generally used as capacitor dielectric layers in DRAMs. To shrink storage capacitors and to produce non-volatile memories, "novel" metal oxide-containing capacitor materials (paraelectrics or ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/316H01L21/02H01L21/3105H01L21/318H10B12/00H10B20/00
CPCH01L27/11507H01L27/10855H01L21/3105H01L27/11502H01L28/55H10B12/0335H10B53/30H10B53/00H10B12/00
Inventor J·赫普夫纳
Owner INFINEON TECH AG