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ZnO schottky diode

A Schottky diode and metal electrode technology, applied in electrical components, circuits, semiconductor devices, etc., can solve the problems of low cut-off frequency, limited application occasions, large series resistance of substrates, etc. The effect of strong anti-radiation ability

Inactive Publication Date: 2005-06-15
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

This kind of Schottky diode has a large substrate series resistance and a low cut-off frequency, so its application is greatly limited

Method used

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  • ZnO schottky diode
  • ZnO schottky diode
  • ZnO schottky diode

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Experimental program
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Embodiment Construction

[0009] refer to figure 1 The ZnO Schottky diode of the present invention is formed by sequentially depositing a first metal electrode layer 2 , a ZnO crystal film epitaxial layer 3 and a second metal electrode layer 4 on the front surface of a substrate 1 from bottom to top. The substrate can be silicon, metal or glass. The thickness of the ZnO crystal film epitaxial layer is 0.3-1 μm. The first and second metal layers can be any metal. Generally, it is better to use aluminum for the first metal layer and platinum for the second metal layer.

[0010] During preparation, the substrate is first cleaned according to a conventional method, and then the first metal layer, such as an aluminum film, is deposited on the substrate by vacuum evaporation, and then a ZnO crystal film layer is deposited on the aluminum film by magnetron sputtering deposition. A photolithographic process produces a second metal electrode layer, such as a platinum electrode, on the ZnO film.

[0011] ZnO ...

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Abstract

The ZnO Schottky diode of the present invention is formed by sequentially depositing the first metal electrode layer, the ZnO crystal film epitaxial layer and the second metal electrode layer on the front surface of the substrate from bottom to top. ZnO Schottky diode of the present invention, because the electrode of ohmic contact and Schottky contact is directly on both sides of ZnO epitaxial layer, can avoid the ideality factor of the device caused by the excessive series resistance caused by the substrate to be on the high side, is beneficial to improve Cut-off frequency. Using ZnO thin film, the raw material is abundant, the price is low, and it is suitable for high temperature and high frequency work, and has strong radiation resistance; in addition, there are many kinds of substrates suitable for the deposition of ZnO thin film, which makes the device structure design more flexible and the preparation process is also simple.

Description

technical field [0001] The present invention relates to semiconductor devices. In particular it concerns ZnO Schottky diodes. Background technique [0002] Schottky diodes, especially FM Schottky diodes, can be widely used in microwave frequency mixing, detection and high-speed switching circuits and other fields. For traditional Schottky diodes, the ohmic contact electrodes are directly arranged on the back of the substrate, and the epitaxial layer and the metal electrode layer are sequentially deposited on the front of the substrate from bottom to top, and the thickness of the epitaxial layer is more than 2 μm. The substrate series resistance of this Schottky diode is large, and the cut-off frequency is low, so its application is greatly limited. Contents of the invention [0003] The object of the invention is to provide a ZnO schottky diode which is beneficial to improve the performance of the diode. [0004] The ZnO...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872
Inventor 叶志镇李蓓黄靖云张海燕
Owner ZHEJIANG UNIV