Fluorescence enhanced chip based on all-medium artificial microstructure super-surface
An artificial microstructure and fluorescence enhancement technology, applied in fluorescence/phosphorescence, material excitation analysis, etc., can solve the problems of reduced fluorescence efficiency and large material loss, and achieve the effects of improving detection sensitivity, reducing material loss, and flexible structural design
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[0038] This embodiment is a chip for enhancing fluorescent signal for an up-conversion fluorescent marker (NaYF4:Yb / Tm) with an excitation wavelength of 965nm and a radiation wavelength of 800nm. Silicon (Si) is used as the material of the nano-dielectric column, while the substrate is a quartz glass material (SiO2). The entire chip is submerged in water. The design parameters are as follows:
[0039] p=520nm, t=270nm, r=68nm, d=200nm
[0040] Through numerical simulation, we can get the average local field enhancement spectrum at 40nm above the chip as image 3 shown. It can be observed that there are two field enhancement peaks at wavelengths of 800 nm and 965 nm, which correspond to collective magnetic dipole resonance and electric dipole resonance, respectively. Adjusting the height of the silicon pillar can change the position of the second resonance peak, and adjusting the radius of the silicon pillar can change the positions of the two resonance peaks at the same ti...
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