Semiconductor device and semiconductor module
A semiconductor and integrated technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, semiconductor/solid-state device components, etc., can solve problems such as temperature rise and achieve a firm bonding effect
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no. 1 example
[0067] As this device, the hard disk 100 described in the prior art will be described again.
[0068] In order to mount the hard disk 100 in a computer or the like, it is mounted on a motherboard 112 as necessary. The motherboard 112 is fitted with female (or male) connectors. The connector on the motherboard 112 is connected to the male (or female) connector 111 installed on the FCA and exposed from the back of the case 101 . In the case 101, the storage medium, that is, the recording disc 102 is stacked according to its capacity. The magnetic head 104 floats above the recording disc 102 at a height of 20 to 30 nm. In order to scan, the interval between the recording discs 102 is set. The recording disc 102 is attached to the spindle motor 103 so that no problem occurs during the scanning while maintaining the gap. The spindle motor 103 is mounted on the mounting substrate, and the connector arranged on the back surface of the pressing substrate is exposed from the rear sur...
no. 3 example
[0087] image 3 represents the present semiconductor device 10B, image 3 A is its floor plan, image 3 B is a cross-sectional view along line A-A. because with figure 2 are similar in structure, so only the different parts are described here.
[0088] figure 2 Although the back surface of the bonding pad 14A is used as the external connection electrode as it is, in this embodiment, the wiring 30 integrally formed on the bonding pad 14A and the external connection electrode 31 integrally formed with the wiring 30 are formed. Therefore, the conductive pattern 14 is a generic term that summarizes the bonding pad 14A and the wiring 30 .
[0089] The rectangle represented by the dotted line is the semiconductor element 16. On the back side of the semiconductor element 16, the external connection electrodes 31 are arranged. As shown in the figure, the external connection electrodes 31 are arranged in a ring shape or a matrix shape. This configuration is different from the kn...
no. 4 example
[0094] Here, use image 3 A method of manufacturing the semiconductor device 10B will be described. From Figure 4 to Figure 8 is corresponding to the image 3 Cross-sectional view of line A-A of A.
[0095] First, if Figure 4 The conductive foil 40 is prepared in this way, and the thickness is preferably 10 μm to 300 μm. Here, a rolled copper foil of 70 μm is used. Next, a conductive coating film 41 or a photoprotective film is formed on the surface of the conductive foil 40 as an etching resist mask. This graph is associated with image 3 The bonding pads 14A of A, the wires 30, and the external connection electrodes 31 have the same pattern. When a photoprotective film is used instead of the conductive coating film 41, a conductive coating film of Au, Ag, Pd, or Ni is formed on at least a portion of the lower layer of the photoprotective film corresponding to the bonding pad 14A. This is a coating film provided for soldering (see above Figure 4 ).
[0096] Then, ...
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