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High-frequency current inhibiting body of magnetic loss material displaying projected multiple magnetic inductivity property

A high-frequency current and suppressor technology, applied in the direction of magnetic materials, magnetic objects, magnetic films, etc.

Inactive Publication Date: 2005-11-30
TOKIN CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, since the noise generated in the higher-speed operation of electronic integrated devices and circuit boards contains harmonic components, the signal path exhibits distributed constant characteristics, and there have been cases where pinning hopes on conventional lumped constant circuits The noise prevention measures above are no longer effective

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  • High-frequency current inhibiting body of magnetic loss material displaying projected multiple magnetic inductivity property
  • High-frequency current inhibiting body of magnetic loss material displaying projected multiple magnetic inductivity property
  • High-frequency current inhibiting body of magnetic loss material displaying projected multiple magnetic inductivity property

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Embodiment Construction

[0026] Before describing the embodiments of the present invention, the history of the present invention is introduced.

[0027] The present inventor once invented a synthetic magnet exhibiting a large magnetic loss at high frequencies, and found that the aforementioned generation of spurious radiation from semiconductor devices and electronic circuits, etc., can be effectively suppressed by disposing the synthetic magnet near a source of spurious radiation Methods. From recent studies on the mechanism by which this magnetic loss is used to attenuate spurious radiation, it is known that this occurs because an equivalent resistive element is added to the electronic circuit constituting the source of the spurious radiation. Here, the size of the equivalent resistance element depends on the size of the magnetic loss factor μ" of the magnet. More specifically, when the area of ​​the magnet is constant, the size of the resistance element is equivalently inserted into the electronic ...

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Abstract

In order to provide a magnetic loss material exhibiting outstanding high-frequency magnetic loss characteristics extremely effective in eliminating high-frequency transmission noise from very densely integrated electronic microcircuits such as semiconductor integrated circumference devices, together with a manufacturing method therefor and a high-frequency current suppression body wherein such is used, the present invention is a high-frequency current suppression body having a sheet shape comprising an adhesive layer or a pressure-sensitive adhesive layer (23) on at least one surface of a magnetic thin film (19). This magnetic thin film is a magnetic loss material consisting of M-X-Y, where M is at least one of Fe, Co, and Ni, X is at least one element other than M or Y, and Y is at least one of F, N, and O. The maximum value mu "max of the loss factor mu " of the magnetic loss material exists in a frequency range of 100 MHz to 10 GHz. A relative bandwidth bwr is not greater than 200% where the relative bandwidth bwr is obtained by extracting a frequency bandwidth between two frequencies at which the value of mu " is 50% of the maximum mu "max and normalizing the frequency bandwidth at the center frequency thereof.

Description

technical field [0001] The present invention relates to magnets having outstanding magnetic loss properties at high frequencies. More specifically, it relates to a magnetic loss material exhibiting outstanding complex permeability characteristics, which can effectively suppress the occurrence of problems in active devices operating at high speed, high-frequency electronic components and electronic equipment, together with a method of manufacturing the same The parasitic radiation, and the high-frequency current suppression body and suppression method using this magnetic loss material. Background technique [0002] In recent years, there has been a remarkable proliferation of highly integrated semiconductor devices operating at high speeds. Examples include random access memory (RAM), read only memory (ROM), microprocessor (MPU), central processing unit (CPU), image processing arithmetic logic unit (IPALU), and other logic circuit devices. In these active devices, higher sp...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01F1/00H01F41/18H01F41/20H01L23/552H01Q17/00H05K1/02H05K9/00
CPCH05K9/0083Y10S428/90H01L2924/0002H05K1/0233Y10S428/928H01L2924/3011H01L23/552Y10T428/28Y10T428/14H01L2924/00
Inventor 渡边真也龟井浩二栗仓由夫
Owner TOKIN CORP