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Ditch and hole structure and filling method thereof

A technology of holes and grooves, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as increasing trench capacitance impedance and device failure

Inactive Publication Date: 2005-12-14
PROMOS TECH INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0021] Another object of the present invention is to provide a gap-free trench filling method and filler to solve the above-mentioned problem of increasing the impedance of the trench capacitor due to the gap in the filler, or even causing the device to fail.

Method used

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  • Ditch and hole structure and filling method thereof
  • Ditch and hole structure and filling method thereof
  • Ditch and hole structure and filling method thereof

Examples

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Embodiment Construction

[0059] Figure 6A~6F It shows that in the first embodiment of the present invention, single crystal silicon whiskers are filled in the columnar trenches by a vapor-liquid-solid process.

[0060] Please refer now Figure 6A , Showing that a part of the semiconductor substrate with empty trenches has been formed. The semiconductor substrate 600 is preferably composed of single crystal silicon. The trench 640 opens from the surface of the semiconductor substrate 600 and extends to the inside of the semiconductor substrate 600.

[0061] Please refer to Figure 6B , A silicon material layer 672 is, for example, chemical vapor deposition (chemical vapor deposition; CVD), silicon methane (SiH 4 ) Is a reactive gas and is formed on the surface of the trench 640. The silicon material layer 672 may contain only silicon, or may be silicon doped with, for example, arsenic.

[0062] Please refer to Figure 6C A metal layer 674 is formed on the surface of the silicon material layer 672 by, for...

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Abstract

The invention provides a structure of grooves and holes and a filling method thereof, which includes the following steps. First, a semiconductor substrate is provided, and an empty trench or hole is formed on the surface, and a first material is formed on the surface of the empty trench; a second material is formed on the surface of the empty trench formed with the first material. ; performing heat treatment to melt the first material and the second material formed on the surface of the empty trench, and gather at the bottom of the empty trench to become a seed crystal; and passing a precursor gas into the bottom of the empty trench On the surface of the seed crystal, a third material is formed to fill the empty trench.

Description

Technical field [0001] The present invention relates to a semiconductor integrated circuit process technology, in particular to a semiconductor integrated circuit, such as a dynamic random access memory (DRAM), seamless trenches and holes formed, and a manufacturing method thereof . Background technique [0002] In recent years, with the increase in the integration of integrated circuits, the semiconductor process design is also moving towards reducing the size of semiconductor components to increase the density. Taking the currently widely used dynamic random access memory as an example, the 64M DRAM process has been converted from 0.35μm to Less than 0.3μm, while 128M DRAM or 256M DRAM is developing towards less than 0.2μm. [0003] A capacitor is basically composed of two conductive layer surfaces (ie electrode plates) separated by an insulating material, and the capacity of a capacitor to store charges is determined by three physical characteristics, namely (1) the thickness ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/30
Inventor 李兴中罗建兴
Owner PROMOS TECH INC
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