Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

CdSe quantum point and method for preparing strong fluorescent transparent liquor including CdSe quantum point

A transparent solution, quantum dot technology, applied in chemical instruments and methods, lasers, luminescent materials, etc., can solve problems such as experimental conditions restricting applications, and achieve the effects of safe and easy availability of raw materials, good stability and low price

Inactive Publication Date: 2006-06-21
WUHAN UNIV
View PDF0 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although this method can be used to successfully synthesize II-VI quantum dots such as CdSe, but because the quantum dots usually prepared use highly toxic and flammable reagents such as TBP and TOP, glove boxes are generally used, and harsh experimental conditions limit their application

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • CdSe quantum point and method for preparing strong fluorescent transparent liquor including CdSe quantum point
  • CdSe quantum point and method for preparing strong fluorescent transparent liquor including CdSe quantum point
  • CdSe quantum point and method for preparing strong fluorescent transparent liquor including CdSe quantum point

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0015] 1. Take by weighing 0.079g of selenium powder, put into the flask that 20mL octadecene (ODE) is housed, adopt Schlenk technology, fill with Ar gas after vacuumizing with vacuum pump, so repeat six times so that the reaction vessel is full of Ar Then heat it to 200-220°C, keep it warm for 20 minutes, cool to room temperature, if there is a small amount of insoluble matter, discard it, and prepare a stock solution of 0.05mol / L selenium.

[0016] 2. Weigh 0.0512g CdO, 0.456g stearic acid and 10mL ODE into a three-port Schlenk reaction vessel. Using Schlenk technology, vacuumize with a vacuum pump and fill it with Ar gas. Repeat this six times to fill the reaction vessel with Ar gas. , then heated to 150 ° C and kept for about 20 minutes to fully dissolve the CdO; then lowered to room temperature for storage. A stock solution of Cd was prepared. The Cd stock solution needs to be heated to 60-80°C before use.

[0017] 3. Get 4mL of the stock solution of 0.05mol / L selenium,...

Embodiment 2

[0020] 1. Take by weighing 0.079g of selenium powder, put into the flask that 20mL octadecene (ODE) is housed, adopt Schlenk technology, fill with Ar gas after vacuumizing with vacuum pump, so repeat six times so that the reaction vessel is full of Ar Then heated to 200°C, kept warm for 20 minutes, then cooled to room temperature, discarded if there was a small amount of insoluble matter, and prepared a stock solution of 0.05mol / L selenium.

[0021] 2. Weigh 0.0512g CdO, 0.456g stearic acid and 10mL ODE into a three-port Schlenk reaction vessel. Using Schlenk technology, vacuumize with a vacuum pump and fill it with Ar gas. Repeat this six times to fill the reaction vessel with Ar gas. , and then heated to 150 ° C and kept for about 20 minutes to fully dissolve the CdO, and then lowered to room temperature for storage to obtain a cadmium stock solution. The Cd stock solution needs to be heated to 60-80°C before use.

[0022] 3. Take 0.5mL of 0.04mol / L Cd stock solution, add 0...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention discloses a method for preparing CdSe quantum dots. CdSe quantum dots with different particle sizes are prepared under relatively mild conditions by using cadmium oxide and selenium powder as raw materials. This method can avoid the use of extremely flammable, explosive, expensive and toxic compounds such as tri-n-octylphosphine (TOP) or tri-n-butylphosphine (TBP) used in the literature, and is safe, easy and repeatable to operate. No need to use glove box, low cost. The obtained product is uniform and has good monodispersity, and the particle size is controllable. The synthesized CdSe quantum dots can be used as fluorescent labeling materials, light-emitting devices, lasers and other fields, or can be used for biological detection and analysis after further modification.

Description

technical field [0001] The invention relates to a preparation method of CdSe quantum dots and a strong fluorescent transparent solution containing CdSe quantum dots. Background technique [0002] Quantum dots are semiconductor nanocrystals with a radius smaller than or close to the exciton Bohr radius. Due to their unique quantum size effect and surface effect, they have broad application prospects in luminescent materials and photosensitive sensors. CdSe, CdS and other type II-VI quantum dots have special and excellent fluorescence emission properties in the visible light region. They have high fluorescence intensity, low bleaching rate, narrow fluorescence spectrum, high sensitivity, and continuous distribution of excitation spectrum. The peak position of fluorescence spectrum can be passed Change the size of quantum dots to adjust, and the emission spectrum of many II-VI quantum dots, such as CdS, CdSe, CdTe, etc., spans the visible spectrum region, and different quantum ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00C09K11/54C09K11/88C01G11/00H01L33/00H01S5/00
Inventor 何治柯梁建功
Owner WUHAN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products