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Ultraviolet ray programmed P-type mask type ROM and making method thereof

A read-only memory and manufacturing method technology, which is applied in semiconductor/solid-state device manufacturing, electric solid-state devices, semiconductor devices, etc., can solve problems such as control deviation, missing, leakage current, etc., and achieve the effect of reducing leakage current

Inactive Publication Date: 2006-07-05
MACRONIX INT CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the improved method of the known technology is prone to defects due to the control deviation of the dosage (Dosage) of the comprehensive erasing implantation process.
That is to say, when the implantation dose of the overall erasing implantation process is insufficient, there will still be a problem of leakage current; and when the implantation dose is too high, it will diffuse laterally to the channel (Channel) due to the impurities (Dopant) implanted into the N-type well. ), resulting in a short channel effect (Short Channel Effect)

Method used

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  • Ultraviolet ray programmed P-type mask type ROM and making method thereof
  • Ultraviolet ray programmed P-type mask type ROM and making method thereof
  • Ultraviolet ray programmed P-type mask type ROM and making method thereof

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Embodiment Construction

[0031] In order to prevent the problem of leakage current between the bit lines of the P-type mask mode read-only memory (P-type Mask ROM), and promote the development of components towards miniaturization, the present invention provides a P-type mask mode only programmed by ultraviolet rays. A manufacturing method of a read memory (UV-programmed P-typeMask ROM).

[0032] Figure 1A ~ Figure 6A and Figure 1B ~ Figure 6B They are respectively a cross-sectional view and a top view of the manufacturing process of a P-type mask-mode read-only memory programmed by ultraviolet light according to a preferred embodiment of the present invention.

[0033] Please refer to Figure 1A and Figure 1B First, an N-type heavily doped well (Heavily Doped Well) 100 is formed on the substrate 10 to increase the threshold voltage (Threshold Voltage) of all memory cells (MemoryCell) formed later, so that all memory cells are at "0 "status. Among them, if phosphorus is used as an impurity to f...

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Abstract

UV programmed p-type mask read-only memory and its process method is to increase the start voltage of all the memory units to be formed at the difficult conducting first logic state (0 or 1) to avoid generating current leakage between bit lines, then, after bit lines and character lines are formed, the memory unit going to store a second logic value (1 or 0) is illuminated by UV to inject electronics into the nitration case for programming.

Description

technical field [0001] The present invention relates to a manufacturing method of a read only memory (ROM for short), and in particular to a UV-programmed P-type mask read-only memory (UV-programmed P-type mask ROM) and its method of manufacture. Background technique [0002] The current P-type mask mode read-only memory usually includes a substrate with an N-type well, a bit line (Bit Line) located in the N-type well, a word line (Word Line) across and perpendicular to the bit line, and a word line (Word Line) located in the N-type well. A silicon oxide / silicon nitride / silicon oxide (Oxide-Nitride-Oxide, ONO for short) composite layer between the word line and an oxide layer between the bit line and the word line. [0003] However, as the requirements for circuit integration become higher and higher, and the design of circuit elements is also developed towards miniaturization, the above-mentioned P-type mask mode ROM will cause a gap between the bit lines due to the too sm...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112H01L21/8246H10B20/00
Inventor 郭东政刘建宏潘锡树黄守伟
Owner MACRONIX INT CO LTD