Unlock instant, AI-driven research and patent intelligence for your innovation.

MOS FET and its producing method

An oxide semiconductor and field effect transistor technology, which is applied in the field of metal oxide semiconductor field effect transistors and their manufacturing, and can solve problems such as structure and specification inconsistency

Inactive Publication Date: 2006-10-11
宇临科技股份有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Therefore, as the demand for inkjet head chips changes, the structure and specifications of the drive components of the current inkjet head chips with integrated drive components do not meet the current requirements.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • MOS FET and its producing method
  • MOS FET and its producing method
  • MOS FET and its producing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0033] Take the n-channel metal oxide semiconductor field effect transistor as an example, that is, n-chammel MOS field effect transistor, please refer to Figures 1 to 7 , shows the fabrication flow chart of the embodiment of the present invention; firstly, a local oxidation of silicon (LOCOS) process is performed on a silicon substrate to form a field oxide (FOX) and isolate the active region and The base contacts the active area. Please refer to figure 1 First, high temperature oxidation is performed on the silicon substrate 10 to form a stress buffer oxide layer 11, and then a silicon nitride layer 12 (silicon nitride) is deposited by chemical vapor deposition (CVD), and then photolithography (lithography) and Etching and other steps define an active area and a base contact active area on the silicon nitride layer 12 . Such as figure 2 As shown, a thick field oxide layer 13 is formed to isolate the active region and the base contact active region by a high temperature ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A metal oxide semiconductor field effect transistor and its manufacturing method are used to manufacture high-density and low line width inkjet head chips. The metal oxide semiconductor field effect transistor is formed on a silicon substrate with a shallower doped junction. The source and drain of the surface depth, combined with the lower temperature manufacturing process, prevent the source and drain doping from contacting each other due to high diffusion, and then add a high-melting-point material stud to the drain-source contact hole to avoid conductor Intermelt penetration with the silicon interface destroys the characteristics of the components, so as to meet the high component density requirements of the inkjet head chip.

Description

technical field [0001] The invention relates to a metal oxide semiconductor field effect transistor and a manufacturing method thereof, in particular to a metal oxide semiconductor field effect transistor applied to high-density components and a manufacturing method thereof. Background technique [0002] Inkjet printers form characters or images by jetting ink droplets onto the printing medium, so the size, shape, raw material, concentration, and positioning of the ink droplets produced by the inkjet head chip affect the printing quality. Key factor. The smaller the ink drop size, the higher the printing resolution can be achieved, but in general, the printing speed is also reduced. In order to increase the printing speed and printing resolution at the same time, increasing the number of nozzles in the inkjet head chip is the most accurate way to solve the problem. [0003] To achieve this purpose, it is currently widely integrated with switching and active driving compone...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/786H01L21/335B41J2/135
Inventor 刘建宏刘健群陈俊融胡纪平
Owner 宇临科技股份有限公司