Silicon nitride read only memory structure possessing protection diode and its operation method
A read-only memory and protection diode technology, applied in the field of silicon nitride read-only memory structure, can solve problems such as affecting the operation speed of components and reducing
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[0031] The structure and operation method of a silicon nitride read-only memory with a variable breakdown voltage protection diode described in the present invention, please refer to FIG. 1 and FIG. 2 at the same time, to describe the embodiment of the present invention in detail. FIG. 1 is a top view of a protection diode with variable breakdown voltage according to an embodiment of the present invention. 2 is a cross-sectional view of a silicon nitride ROM structure with a variable breakdown voltage protection diode according to an embodiment of the present invention.
[0032] First, please refer to FIG. 1 and FIG. 2, the silicon nitride ROM structure with variable breakdown voltage protection diode of the present invention includes a substrate 100, an N-well 102, a P-well 104, a charge trapping layer 106, a gate Conductor layer 108 (word line), diode (N + doped region) 110, polysilicon protection ring (Poly Guard Ring) 112, N + Guard ring 114 , plug 116 , plug 118 , plug ...
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