Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Silicon nitride read only memory structure possessing protection diode and its operation method

A read-only memory and protection diode technology, applied in the field of silicon nitride read-only memory structure, can solve problems such as affecting the operation speed of components and reducing

Inactive Publication Date: 2007-07-04
MACRONIX INT CO LTD
View PDF2 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the silicon nitride read-only memory device with this structure, when performing programming or reading operations, the bias voltage given to the word line will be higher than that of the diode (N + The breakdown voltage of the doped region), so the bias applied to the word line will be caused by the diode (N + The electrical collapse of the doped region) is reduced, which in turn affects the speed of element operation (writing / erasing)

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon nitride read only memory structure possessing protection diode and its operation method
  • Silicon nitride read only memory structure possessing protection diode and its operation method
  • Silicon nitride read only memory structure possessing protection diode and its operation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0031] The structure and operation method of a silicon nitride read-only memory with a variable breakdown voltage protection diode described in the present invention, please refer to FIG. 1 and FIG. 2 at the same time, to describe the embodiment of the present invention in detail. FIG. 1 is a top view of a protection diode with variable breakdown voltage according to an embodiment of the present invention. 2 is a cross-sectional view of a silicon nitride ROM structure with a variable breakdown voltage protection diode according to an embodiment of the present invention.

[0032] First, please refer to FIG. 1 and FIG. 2, the silicon nitride ROM structure with variable breakdown voltage protection diode of the present invention includes a substrate 100, an N-well 102, a P-well 104, a charge trapping layer 106, a gate Conductor layer 108 (word line), diode (N + doped region) 110, polysilicon protection ring (Poly Guard Ring) 112, N + Guard ring 114 , plug 116 , plug 118 , plug ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A structure for silicon nitride read-only storage with protective diode is composed of substrate, storing unit of silicon nitride read-only storage, N+ doping region, N+ guard ring and polysilicon guard ring as the storing unit of silicon nitride read only storage to be located on the substrate, N+ doping region to be located in the substrate and to be connected with a character line of the storing unit for silicon nitride read only storage, N+ guard ring to be located in the substrate around the N+ doping region and the polysilicon guard ring to be located on the substrate between N+ doping region and N+ guard ring.

Description

technical field [0001] The present invention relates to a structure of a non-volatile memory (Non-Volatile Memory) element, and in particular to a structure of a silicon nitride read-only memory with a protection diode and an operation method thereof. Background technique [0002] The Electrically Erasable Programmable Read Only Memory (EEPROM) in the non-volatile memory has the ability to store, read, and erase data multiple times, and the stored data is interrupted. It has the advantage that it will not disappear after power on, so it has become a memory component widely used in personal computers and electronic equipment. [0003] A typical EEPROM uses doped polysilicon to make a floating gate (Floating Gate) and a control gate (Control Gate). When the memory is programmed, the appropriate programming voltage is applied to the source region, the drain region and the control gate respectively, and electrons will flow from the source region to the drain region through the ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/112H01L21/8246
Inventor 郭东政
Owner MACRONIX INT CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products