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Preloaded plasma reactor device and its use

A plasma and pre-reaction technology, applied in plasma, semiconductor/solid-state device manufacturing, coating, etc., can solve problems such as ion track deformation

Inactive Publication Date: 2007-08-15
INT BUSINESS MASCH CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in practical applications, ion trajectories are generally distorted due to localized charging and electron shading caused by the solid angle exclusion of the sidewalls of the mask material selectively deposited on the layer

Method used

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  • Preloaded plasma reactor device and its use
  • Preloaded plasma reactor device and its use

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Embodiment Construction

[0011] The pre-reaction chamber controls the chemistry of plasma-based processing devices from the charge at the wafer surface by decoupling gas-phase and surface-phase reactions. The pre-reaction chamber provides an operational working environment (eg, high temperature, high plasma energy, high pressure, etc.) that is generally not required for the surface phase chemistry of the wafer but is required for the formation of the gas phase of the preferred reagents for processing the wafer.

[0012] Referring to FIG. 1, a plasma-based processing apparatus incorporating an exemplary embodiment of a pre-reaction plasma processing chamber is shown at 10, hereinafter referred to as "apparatus 10". Apparatus 10 includes a pre-reaction plasma processing chamber 12 (hereinafter "pre-reaction chamber 12") in fluid communication with a gas intake manifold 14, an energy source 16 operatively connected to 12, a The wafer plasma processing chamber 18 communicates with each other. A wafer 17 ...

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Abstract

A pre-loaded plasma-based processing system comprises a pre-reaction plasma processing chamber, a power source disposed in operable communication with the pre-reaction plasma processing chamber, and a wafer plasma processing chamber disposed in fluid communication with the pre-reaction plasma processing chamber. The pre-reaction plasma processing chamber is configured to effect a plasma-based chemical reaction of reactant materials to produce a reactive radical. The wafer plasma processing chamber is configured to react the reactive radical with a species at a surface of a wafer disposed in the wafer plasma processing chamber. Other embodiments include a method of processing a wafer in a plasma environment and preloading of the reactive gas stream to prevent erosion of wafer masking or etch stop layers.

Description

technical field [0001] The present invention relates generally to plasma-based processing and, more particularly, to plasma-based processing having a pre-reaction chamber preloaded with reaction reagents equipment. Background technique [0002] In the production of semiconductors, plasma-based processing is used as a means of generating highly reactive species for patterning and deposition that do not adversely affect the silicon substrate of the semiconductor wafer or the components deposited on the wafer . The performance of this method is a compromise between gas phase reactivity and surface phase chemistry. High-energy electron chemistry in the gas phase involves the excitation of plasma electrons in electromagnetic fields. Surface phase chemistry involves the flow of particles from the plasma to the wafer surface. Although the heating required in plasma-based processing is orders of magnitude lower than that required in a plasma-free environment, the flow of particl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/00H01L21/205H01L21/3065C23C16/513H05H1/46H01J37/32H01L21/306H01L21/308
CPCH01L21/308H01J37/32192H01J37/32357
Inventor 理查德·怀斯马克·C·哈基西德哈撒·潘达博米·A·陈
Owner INT BUSINESS MASCH CORP