Parts for vacuum film-forming device and vacuum film-forming device using the same and board device thereof
A film-forming device and component technology, which is applied in the field of target plate devices, can solve the problems of rising film-forming costs, reducing the effective workpiece time ratio, etc., achieving the effects of reducing production, reducing device cleaning times, and improving quality
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Embodiment 1
[0094] Specific embodiments of the present invention will be described in detail below. (Example 1, Comparative Example 1)
[0095] First, an Al sprayed film with a thickness of 250 μm and a Ti sprayed film with a thickness of 100 μm were sequentially formed on the surface of a SUS 304 base material by plasma spraying method to obtain Figure 7 The grounded shield plate 13 , the upper shield plate 14 , the lower shield plate 15 and the pressure ring 17 of the sputtering apparatus are shown. A magnetron sputtering apparatus was constructed using these components.
[0096] The Al spraying is carried out under conditions of a current of 500 A and a voltage of 80 V using an Al spraying raw material having a powder average particle size of 52 μm. The Ti spraying raw material with a powder average particle size of 65 μm was used for the Ti spraying, and it was carried out under the conditions of a current of 500 A and a voltage of 65 V. The surrounding environment during spraying...
Embodiment 2
[0102] As in the above-mentioned Example 1, a magnetron sputtering apparatus was constituted by using each member of the laminated film of the Al sprayed film and the Ti sprayed film shown in Table 2, respectively. The surface roughness of the outermost surface of the sprayed coating and the hardness of each sprayed coating are shown in Table 2 for details. The surface roughness of the spray coating is adjusted according to the particle size of the powder. The hardness of the sprayed coating was adjusted according to the annealing conditions.
[0103] Using these magnetron sputtering apparatuses, a Ti / TiN thin film was formed on an 8-inch sheet in the same manner as in Example 1, and the number of particles with a diameter of 0.2 μm or more on the Ti / TiN thin film was measured. Such a thin film was formed continuously, and the service life was investigated in the number of batches until the particles were increased until peeling occurred. In addition, the average value of th...
Embodiment 4
[0109] First, several kinds of Al spraying raw materials having different particle size distributions in the range of powder particle size 40-120 μm are prepared. Using these Al spraying raw materials, in Figure 7 Al sprayed films with a thickness of 200 μm were formed on the ground shield plate 13, upper shield plate 14, lower shield plate 15, and pressure ring 17 (substrate made of SUS 304) of the sputtering device shown in the figure. . Next, after cleaning the Al sprayed surface, heat treatment is carried out under the condition of 300-500°C×3hr in vacuum. The surface roughness of each Al spray coating is shown in Table 4.
[0110] Next, these components were installed in a magnetron sputtering apparatus equipped with a tungsten-silicon compound (WSi2.8) target plate, WSix thin films were formed on 8-inch wafers, and the number of particles with a diameter of 0.2 μm or more on the WSix thin films was measured. Such thin films were continuously formed, and the average n...
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Abstract
Description
Claims
Application Information
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