Heat treatment equipment and semiconductor device manufacture method
A technology for heat treatment equipment and semiconductors, used in semiconductor/solid-state device manufacturing, chemical instruments and methods, crystal growth, etc., and can solve problems such as increased power consumption and larger equipment.
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Embodiment 1
[0067] will refer to Figure 9 Crystallization of an amorphous semiconductor film using the heat treatment apparatus of the present invention will be described.
[0068] exist Figure 9 Among them, one substrate 201 is a light-transmitting substrate made of aluminoborosilicate glass or barium borosilicate glass. Its thickness is 0.3 to 1.1 mm. An amorphous silicon film 203 is formed on the substrate 201 by the plasma CVD method. A barrier layer 202 is formed such that impurity elements are not mixed from the substrate 201 into the amorphous silicon film 203 under heat treatment or the like. Usually, the barrier layer 202 is formed using an insulating film containing silicon as a component. However, in this embodiment, SiH 4 , N 2 O, and NH 3 A first silicon oxynitride film was prepared so as to have a thickness of 50 nm, and the SiH 4 , and N 2 O A second silicon oxynitride film was prepared so as to have a thickness of 100 nm, and these films were stacked (laminated)...
Embodiment 2
[0076] A method of manufacturing a TFT using the crystalline semiconductor film produced as described above will be described with reference to FIGS. 10A to 10D.
[0077] First, as shown in FIG. 10A, crystalline semiconductor films 303 and 304 separated in an island shape are formed on a light-transmitting substrate 301 made of aluminoborosilicate glass, barium borosilicate glass, or the like. Further, a first insulating film 302 is formed between the substrate 301 and the semiconductor films 303 and 304 to have a thickness of 50 to 200 nm. The first insulating film 302 is made of one of silicon nitride, silicon oxide, silicon oxynitride, or a combination thereof.
[0078] As an example of the first insulating film 302, SiH 4 and N 2 O forms a silicon oxynitride film with a thickness of 50 to 200 nm. Alternatively, a dual structure can be used in which SiH 4 and, NH 3 and N 2 O formed a silicon oxynitride film (50nm) with a thickness of 50nm and with SiH by plasma CVD me...
Embodiment 3
[0093] Figure 13A A configuration is shown in which a driver circuit 401 composed of a p-channel TFT 403 and an n-channel TFT 404 and a pixel section 402 composed of an n-channel TFT 405 and a storage capacitor 406 are implemented by The process of Example 2 was formed on the same substrate. Although the n-channel TFT 405 has a multi-gate structure, it is fabricated in the same way. In the pixel portion 402, a holding capacitor 406 composed of a semiconductor film 414 formed by the same process as a gate electrode, a second insulating film, and a capacitor electrode 409 is formed. Reference numeral 412 designates a pixel electrode, and 410 designates a connection electrode that connects a data line 408 to the impurity region of the semiconductor film 413 . Also, reference numeral 411 designates a gate line, which is connected to a third shape electrode 407 serving as a gate electrode (not shown). The third shape electrode 407 is formed by etching the tantalum nitride of th...
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Abstract
Description
Claims
Application Information
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