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Anode oxidizing process for treating surface of porous silicon

A technology of anodic oxidation and surface treatment, applied in post-processing, post-processing details, chemical instruments and methods, etc., can solve the problems of difficult control accuracy, unsuitable for industrial production, complex equipment, etc., easy to achieve accuracy control, and low production cost , the effect of simple equipment

Inactive Publication Date: 2003-02-12
EAST CHINA NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The disadvantages of the background technology are that the equipment is complicated, the operation is cumbersome, the control accuracy is difficult, and the output is low. It is suitable for scientific research and not suitable for industrial production.

Method used

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  • Anode oxidizing process for treating surface of porous silicon
  • Anode oxidizing process for treating surface of porous silicon
  • Anode oxidizing process for treating surface of porous silicon

Examples

Experimental program
Comparison scheme
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Embodiment 1

[0019] The anodic oxidation surface treatment technology of embodiment 1 porous silicon

[0020] Porous silicon anodized surface treatment process: H 2 o 2 Solution concentration: 0.5%

[0021] Voltage of regulated power supply 1: 2.2v

[0022] Current density: 0.5mAcm -2

[0023] Power-on time: 20min

[0024] Drying process: cleaning time: 12min

[0025] Drying method: one of four drying methods

Embodiment 2

[0026] The anodic oxidation surface treatment technology of embodiment 2 porous silicon

[0027] Porous silicon anodized surface treatment process: H 2 o 2 Solution concentration: 10%

[0028] Voltage of regulated power supply 1: 2.6v

[0029] Current density: 3mAcm -2

[0030] Power-on time: 10min

[0031] Drying process: cleaning time: 15min

[0032] Drying method: one of four drying methods

Embodiment 3

[0033] The anodic oxidation surface treatment technology of embodiment 3 porous silicon

[0034] Porous silicon anodized surface treatment process: H 2 o 2 Solution concentration: 24%

[0035] Voltage of regulated power supply 1: 4.8v

[0036] Current density: 9mAcm -2

[0037] Power-on time: 50sec

[0038] Drying process: cleaning time: 18min

[0039] Drying method: one of four drying methods

[0040] The above embodiments greatly weaken the surface activity of the porous silicon, making it possible to dry the wet porous silicon by any conventional drying method.

[0041] So far, a dry porous silicon product is obtained.

[0042] The porous silicon treated by one of the anodic oxidation surface treatment techniques in Examples 1 to 3, after being dried by a conventional drying method, has a smooth surface and is as bright as a mirror, and can be stored in the air for a lo...

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Abstract

An anode oxidization process for treating the surface of multi porous silicon includes such steps as suspending a wet p-type monosilicon wafer attached with multi porous silicon on its surface in a corroding tank, pouring the aqueous solution of H2O2, turning on electric power for anode oxidizing, then washing and drying the mentioned monosilicon wafer. Its advantages are simple equipment, easy control to precision, and low cost.

Description

technical field [0001] The invention relates to a porous silicon anodic oxidation surface treatment technology, which belongs to the technical field of semiconductor materials, more precisely, the preparation of functional information materials. Background technique [0002] Porous silicon is a sponge-like porous material with a pore diameter on the order of nanometers. Since Uhlir first prepared porous silicon by anodic oxidation in 1956, more and more scientific researchers have paid attention to this research, especially in the past 10 years, its application prospects in the fields of microelectronics and optoelectronics have attracted a lot of attention. It has become a hot spot of current research. [0003] The preparation of porous silicon generally adopts the electrochemical corrosion method: suspend the P-type single crystal silicon wafer in the etching tank, inject the etching solution, a mixed solution of HF, water and absolute ethanol, and us...

Claims

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Application Information

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IPC IPC(8): C25F3/12C30B33/08
Inventor 虞献文朱自强
Owner EAST CHINA NORMAL UNIV
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