Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Strong dielectric memory

A ferroelectric and storage device technology, applied in information storage, static memory, digital memory information, etc., can solve the problems of large memory area and inability to increase capacity, and achieve the effect of reducing power consumption

Inactive Publication Date: 2003-10-08
SEIKO EPSON CORP
View PDF1 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, this active ferroelectric memory device has a larger memory area than other non-volatile memory devices known as other non-volatile memory devices composed of one element of the memory cell, and cannot increase the capacity.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strong dielectric memory
  • Strong dielectric memory
  • Strong dielectric memory

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment approach

[0034] (Explanation of its structure)

[0035] figure 1 It is a block diagram of FeRAM of the ferroelectric memory device related to the first embodiment of the present invention, figure 2 A three-dimensional view of its storage array for the model. Such as figure 2 As shown, the memory cell array 10 has a ferroelectric film 12 , a plurality of word lines 14 arranged on one side of the ferroelectric film 12 , and a plurality of bit lines 16 arranged on the other side of the ferroelectric film 12 .

[0036] With the above structure, at each intersection (intersection type) of the plurality of word lines 14 and the plurality of bit lines 16, as figure 1 As shown, the ferroelectric memory cells 18 are respectively formed. According to this construction, as figure 2 The memory shown is called a cross-point type FeRAM or a passive type FeRAM. In this way, if figure 2 The shown memory is different from an active memory having a 1T / 1C cell in which a transistor and a capac...

no. 4 Embodiment approach

[0087] Figure 13 expresses the replacement Figure 10 The power-on timing generating circuit 40 shown is the fourth embodiment of the present invention provided with a power-on timing generating circuit 42 .

[0088] Separately Figure 13 An example of the power-on timing generation circuit 42 shown is shown in Figure 14 , express its action sequence diagram in Figure 15 middle. The output PEQ2 of the power-off sequence generation circuit 42, such as Figure 15 When disconnected from the power supply voltage Vcc as shown (at Figure 15 The falling edge time t0) of the middle power supply off signal rises synchronously, and even after the power supply voltage Vcc becomes 0V, after a predetermined period of time, it can reach above the threshold voltage Vth of the N-type MOS transistor 34 of the short-circuit switch 34 constituting the short-circuit circuit 30. . In this way, the short-circuit operation in the short-circuit circuit 30 can be performed even when the pow...

no. 5 Embodiment approach

[0091] Figure 16 for settings such as Figure 10 shown in the power-on timing generation circuit 40 and Figure 13 A block diagram of a fifth embodiment of the present invention of a power-on timing generating circuit 42 is shown. exist Figure 16 In, there are a plurality of first short-circuit switches (NMOS) 34A connected between each end of the word line 14 and bit line 16 and the common short-circuit line 32, and a power-on switch is connected to the common gate control line 36A. Timing generation circuit 40. Furthermore, a plurality of second short-circuit switches 34B are provided in parallel with each of the plurality of first short-circuit switches, and the power-off timing generating circuit 42 is connected to the common gate line 36B. In this way, when the power is turned on, the plurality of first short-circuit switches 34A can be turned on, and when the power is turned off, the plurality of second short-circuit switches 34B can be turned on. In this way, the...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a ferroelectric storage device, in which a plurality of word lines and a plurality of bit lines are disposed on both sides of a ferroelectric thin film, and a storage unit is composed of a ferroelectric capacitor. These word lines and bit lines are driven by a word line driving unit and a bit line driving unit supplied with multiple driving voltages through a power supply circuit, thereby implementing various operation modes of data writing, reading and rewriting. Furthermore, a short-circuit circuit connected to the ends of the word lines and bit lines is provided, and these word lines and bit lines are all short-circuited when the power is turned on and off after the operation mode is implemented.

Description

technical field [0001] The present invention relates to a ferroelectric storage device. Background technique [0002] As a ferroelectric storage device, it is known that there are 1T / 1C cells in which a transistor and a capacitor (ferroelectric) are arranged on each cell, or active ferroelectric cells in which a reference cell 2T / 2C is also arranged on each cell. memory. [0003] However, this active ferroelectric memory device has a large memory area and cannot be increased in capacity as compared with other nonvolatile memory devices known as other nonvolatile memory devices composed of one element of a memory cell. [0004] Japanese Unexamined Patent Publication Hei 9-116107 discloses a ferroelectric memory device in which each cell is a ferroelectric capacitor. Contents of the invention [0005] In the ferroelectric memory device in which each memory cell is a ferroelectric capacitor, there are still problems to be solved in terms of power consumption reduction, high...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G11C11/22
CPCG11C11/22
Inventor 山村光宏
Owner SEIKO EPSON CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com