Vapour deposition device for metal organic compound

Abstract

The present invention relates to a vapor-phase deposition equipment of metal organic compound, including growing chamber and sample-feeding chamber which are communicated by using gate plate valve, in the growing chamber a rotatable horizontal sample disk is mounted. It is characterized by that the top portion of the growing chamber is equipped with an auxiliary gas circuit pipeline perpendicularto the sample disk, and its horizontal main gas circuit pipe is mounted on the side wall of the growing chamber, and a conical quartz cover is connected on the gas outlet of the auxiliary gas circuitpipeline. When it is worked, the reaction gas is fed into main gas circuit pipeline, and the hydrogen gas and nitrogen gas (non-reactive gas) can be fed into the auxiliary gas circuit pipeline.

Description

technical field [0001] The invention relates to a metal organic compound vapor deposition (MOCVD) device, in particular to a vapor deposition device for growing group III nitrides. Background technique [0002] MOCVD technology is an important compound semiconductor epitaxial growth technology, which can realize the precise doping of epitaxial layer, the cost is moderate, and it can be used in mass production of enterprises. At present, MOCVD devices used by manufacturers generally adopt a multi-chip growth mode in one furnace, and the growth and maintenance costs are quite expensive, which is not suitable for scientific research units. A common research-type MOCVD device has a sampling chamber and a growth chamber connected by a gate valve. The growth chamber is equipped with a rotating horizontal sample tray, and there is only one inlet pipe for inputting the reaction gas. The flow of the reaction gas in the growth chamber The state often canno...

AI Technical Summary

Problems solved by technology

At present, the MOCVD devices used by manufacturers generally adopt the growth mode of multiple wafers in one furnace, and the growth and maintenance costs are quite expensive, which is not suitable for scientific research units.

A common research-type MOCVD device has a sampling chamber and a growth chamber connected by a gate valve. The growth chamber is equipped with a rotating horizontal sample tray, and there is only one inlet pipe for inputting the reaction gas. The flow of the reaction gas in the growth chamber The state is often not adjustable, and the gas cannot reach a better laminar flow state, which affects the thickness uniformity and surface morphology of the sample growth to a certain extent.

Images