Structure of LED electrode and producing method

Abstract

This invention discloses a structure of LED electrode and its manufacturing method. After forming a pn contact surface LED on the baseplate, a layer of silicon oxide is formed around the grain and onthe cut-path part, and deposited by a transparent conductive layer and a layer of Au or AuGe on it, or and opening an open-end at the center; after contacting with heated and alloy formed ohm, a longstrip of Al, Al alloy or Au connecting wire pad is formed at a side of the grain for writing and used as the LED positive electrode, and the negative electrode is formed on the substrate by metal contact. The other structure is that both positive and negative electrodes are on the front with etched pn interface p-type layer, and negative electrode is formed with n-type material and positive electrode with p-type material.

Description

technical field [0001] The present invention relates to the electrode structure and manufacturing method of semiconductor light-emitting diode (LED), in particular to the electrode structure and manufacturing method of LED suitable for stack packaging. Background technique [0002] A light emitting diode (Light Emitted Diode, LED) is a semiconductor component that emits light, and is formed with a pn junction to convert electrical energy into light. It has the characteristics of small size, long life, low driving voltage, fast response, shock resistance, heat resistance, etc., and can meet the needs of light, thin, and miniaturized various application equipment, and is used for various traffic signs, event billboards, and LCD backlights. Light source and other products widely used in daily life. [0003] Light-emitting diodes use various compound semiconductor materials such as III-V materials, II-VI materials, etc., and are designed with different structures such as pn jun...

AI Technical Summary

Problems solved by technology

[0005] The known electrode is in the center so that the electric field can be evenly distributed to the surroundings, but gold and aluminum are opaque. If the electrode is too large, the light will be blocked a lot, and the light generated cannot be fully utilized. If the electrode is too small, the electric field will be excessively concentrated and the current will be reduced. Density increases and lifespan decreases; and a dark hole is formed in the middle, especially at close range

And this kind of electrode cannot be used for stacked packaging

[0006] Another shortcoming of the known electrode structure is the lattice defect formed by the crystal grain cut surface of the peripheral dicing road. Since the electric field is dispersed from the electrode 7 through the p-type semiconductor to the surroundings of the crystal grain, the current easily passes through the crystal lattice defect and concentrates to form a very high brightness. The bright spot is also easy to damage the junction and reduce the life

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