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Resonant cavity system of adjustable multi-wavelength semiconductor laser

A resonant cavity and laser technology, applied in the structure of optical resonant cavity, etc., can solve problems such as inability to form parallel light, uneven resonance loss and difficulties in dual-wavelength resonant cavity system

Inactive Publication Date: 2004-02-25
ARIMA LASERS CORP
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Problems solved by technology

However, in the dual-wavelength resonator system 300 of the adjustable semiconductor laser, it is very difficult to place the convex lens 34 accurately between the grating 30 and the reflector 36 in practice. When the placement of the convex lens 34 deviates , the short-wavelength beam 37 and the long-wavelength beam 38 cannot form parallel light after passing through the convex lens 34, not to mention that the laser beam actually incident on the grating 30 is not an ideal light spot, which also leads to two long and short-wavelength beams that cannot be parallel, so It is impossible to ideally reflect the non-parallel two long and short wavelength beams back to the resonance path with only one mirror 36, which will cause uneven resonance loss of the dual-wavelength resonant cavity system, and the same reason can be deduced to multi-wavelength Inhomogeneous Resonance Loss of Resonant Cavity System

Method used

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  • Resonant cavity system of adjustable multi-wavelength semiconductor laser
  • Resonant cavity system of adjustable multi-wavelength semiconductor laser
  • Resonant cavity system of adjustable multi-wavelength semiconductor laser

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Embodiment Construction

[0046] reference image 3 with Figure 4 . Figure 4 Shown is a dual-wavelength resonant cavity system 400 of an adjustable semiconductor laser according to the present invention, which is image 3 Shown is an improved system of a dual-wavelength resonant cavity system 300 of a known adjustable semiconductor laser. The resonant cavity system 400 includes a grating 30, a first collimating lens 31, a semiconductor optical amplifier 32, and a second collimating lens 33, A convex lens 34, a dimming slit plate 35, a first adjustable reflector 41, and a second adjustable reflector 42. The semiconductor optical amplifier 32 can also be a multi-quantum well semiconductor laser, which includes a curved waveguide path 303 to avoid the formation of internal resonance conditions of the semiconductor laser. The dimming slit plate 35 includes a first slit 301 and a second slit 302, and the grating 30 is placed on the focal length of the convex lens 34. The first and second adjustable mirrors 41...

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Abstract

The present invention provides a resonant cavity system for adjustable multiwavelength semiconductor laser, and the light-modulating slit plate of the resonant cavity system has several slits, every slit is correspondent to a adjustable reflector. It can respectively regulate the reflecting angle of every adjustable reflector to make every incident laser beam be back reflected into original resonance path without loss.

Description

Technical field [0001] The present invention provides a semiconductor laser resonant cavity system, especially a resonant cavity system that uses a plurality of mirrors to reflect lasers with different wavelengths. Background technique [0002] With the advent of the information age, it has become an inevitable trend to use broadband networks to provide a large amount of and fast information transmission with wavelength-division multiplex (WDM) technology. Traditionally, the wavelength of the main optical fiber communication band is about 1.55 microns. And 1.3 microns, because the fiber loss and dispersion loss in the two frequency bands are the smallest. Today, the latest developments in optical fiber technology have been able to significantly reduce the 1.4-micron hydroxyl absorption loss of optical fibers. Therefore, in the future of optical fiber communications, 300-nanometer broadband communications are just around the corner. Therefore, it is imperative to provide a broadba...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01S5/10
Inventor 林清富
Owner ARIMA LASERS CORP
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