Method for producing thin film transistor

A technology of thin film transistors and manufacturing methods, applied in the direction of transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as inability to improve crystal defects, achieve the effect of improving crystal defects and preventing discrete

Inactive Publication Date: 2004-04-07
GETNER FOUND L L C
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

As a result, the second prior art cannot improve crystal defects

Method used

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  • Method for producing thin film transistor
  • Method for producing thin film transistor
  • Method for producing thin film transistor

Examples

Experimental program
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Effect test

no. 1 example

[0034] Figure 3A to Figure 3K is a sectional view of the thin film transistor in each step of the thin film transistor manufacturing method according to the first embodiment. Figure 4 is a temperature profile when performing thermal annealing in this method, and the method of manufacturing a thin film transistor will be explained below based on the first embodiment.

[0035] An N-channel type thin film transistor having a top gate structure is fabricated in the first embodiment.

[0036] First, as shown in FIG. 3A, a base film 2 is formed on an electrically insulating substrate by chemical vapor deposition (CVD). The substrate is composed of a glass substrate with a thickness of about 0.7 mm. The base film 2 is composed of a silicon oxide film with a thickness of about 300 nm. The base film 2 serves as a buffer film to prevent impurities that adversely affect the characteristics of the thin film transistor from entering the thin film semiconductor layer described later fr...

no. 2 example

[0059] Figure 5A and 5B is a sectional view of the thin film transistor in the main steps of the manufacturing method of the thin film transistor according to the second embodiment.

[0060] Those parts and elements corresponding to those of the first embodiment are designated with the same reference numerals and operate in the same manner as the corresponding parts and elements of the first embodiment, unless otherwise specified.

[0061] The second embodiment differs from the first embodiment in that the interlayer insulating film is designed to have a multilayer structure.

[0062] Specifically, as Figure 5A shown in reference to Figure 3K After the explained steps, second interlayer insulating film 17 is formed on the entire surface of substrate 1 by CVD. The second interlayer insulating film 17 is made of silicon nitride and has a thickness of about 400 nm. The second interlayer insulating film 17 and the interlayer insulating film 13 define a multilayer interlaye...

no. 3 example

[0070] Figure 6A to Figure 6Iis a cross-sectional view of the thin film transistor in each step of the thin film transistor manufacturing method according to the third embodiment. Refer to the following Figure 6A to Figure 6I A method of manufacturing the thin film transistor according to the third embodiment is explained.

[0071] The third embodiment differs from the first embodiment in that the third embodiment is applied to a thin film transistor having a bottom gate structure whereas the first embodiment is applied to a thin film transistor having a top gate structure.

[0072] First, if Figure 6A As shown, base film 22 is formed on insulating substrate 21 by CVD. The substrate 21 is composed of a glass substrate having a thickness of about 0.7 mm. Base film 22 is composed of a silicon oxide film having a thickness of about 400 nm. The base film 22 is used as a buffer film to prevent impurities that adversely affect the thin film transistor from invading from the ...

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Abstract

A method of fabricating a thin film transistor including an electrically insulating substrate (1), a semiconductor layer (4) formed on the substrate, and source and drain electrodes (15, 16) formed above source and drain regions (10, 11) formed in the semiconductor layer, the source and drain electrodes being composed of aluminum or aluminum alloy, the method including the steps of forming a gate electrode (9), implanting impurity ions into the semiconductor layer for forming the source and drain regions, forming an interlayer insulating film (13) entirely over the substrate, forming contact holes (14) throughout the interlayer insulating film such that the source and drain regions are exposed through the contact holes, forming an electrically conductive film composed of aluminum or aluminum alloy, in the contact holes for forming the source and drain electrodes (15, 16), and thermally annealing the substrate at 275 to 350 degrees centigrade for 1.5 to 3 hours in inert atmosphere.

Description

technical field [0001] The present invention relates to a manufacturing method of a thin film transistor, in particular, to a manufacturing method of a thin film transistor having a source electrode and a drain electrode, and the source electrode and the drain electrode include a conductive film made of aluminum or an aluminum alloy. Background technique [0002] Thin film transistors (TFTs) having thin semiconductor layers such as amorphous silicon layers and polysilicon layers are widely used as drivers or switching devices for liquid crystal displays, for example. A thin film transistor is generally made as a MOSFET (Metal Oxide Semiconductor Field Effect Transistor) having an insulating substrate such as a glass substrate and a thin semiconductor layer formed on the substrate as an active region. A thin film transistor has the advantage that the above-mentioned driver can be easily manufactured. When a thin film transistor is used in an active matrix type liquid crystal...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/28H01L21/20H01L21/336H01L29/45H01L29/786
CPCH01L29/66757H01L29/78675H01L29/458H01L29/78678H01L29/66765H01L29/786
Inventor 松永直记世良贤二
Owner GETNER FOUND L L C
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