Silicon seed crystal for straight drawing monocrystal growth and its process

A processing method, silicon single crystal technology, applied in the direction of single crystal growth, crystal growth, chemical instruments and methods, etc., can solve the problems of increased manufacturing cost, unsafety, easy fracture of seed crystal, etc., so as to reduce processing cost and prolong The effect of service life

Inactive Publication Date: 2004-04-21
GRINM SEMICONDUCTOR MATERIALS CO LTD
View PDF0 Cites 9 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In this case, the existing seed crystals and their clamping devices can no longer meet the requirements and are not safe, and the seed crystals are prone to breakage. In order to reduce this situation, generally only 1 to 5 seed crystals are used for each seed crystal. crystal growth, which increases manufacturing costs

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Silicon seed crystal for straight drawing monocrystal growth and its process
  • Silicon seed crystal for straight drawing monocrystal growth and its process
  • Silicon seed crystal for straight drawing monocrystal growth and its process

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] Figure 4 It is a perspective view of a silicon seed crystal of the present invention. The silicon seed crystal of the present invention is divided into an upper part 1a of the silicon seed crystal and a lower part 1b of the silicon seed crystal, and the two parts are connected as a whole. The upper part 1a of the seed crystal is a rounded platform, the lower part 1b of the seed crystal is a cylinder, and the lower surface of the upper part 1a of the seed crystal is the upper surface of the lower part 1b of the seed crystal.

[0051] Figure 5 is a cross-sectional view of a seed crystal of the present invention. The angle θ between the sides of the rounded pedestal of the upper part 1a of the seed crystal and the axis is 15°.

[0052] The silicon seed crystal of the present invention is formed by cutting or drilling a silicon single crystal with a certain crystal orientation. The specific processing method is:

[0053] 1. Select a cylindrical silicon single crystal...

Embodiment 2

[0060] Figure 7 is a perspective view of another seed crystal of the present invention. The seed crystal of the present invention is divided into an upper part 1a of the silicon seed crystal and a lower part 1b of the silicon seed crystal, and the two parts are connected as a whole. The upper part 1a of the seed crystal is an inverted hexagonal prism, the lower part 1b of the seed crystal is a hexahedral prism, and the lower surface of the upper part 1a of the seed crystal is the upper surface of the lower part 1b of the seed crystal.

[0061] Figure 8 is a cross-sectional view of another seed crystal of the present invention. The included angle θ between the side edge and the axis of the inverted hexahedral prism at the upper part 1a of the seed crystal is 38°.

[0062] The silicon seed crystal of the present invention is formed by cutting or drilling a silicon single crystal with a certain crystal orientation. The steps that concrete processing method comprises are:

...

Embodiment 3

[0069] Figure 9 is a perspective view of another seed crystal of the present invention. The seed crystal of the present invention is divided into an upper part 1a of the silicon seed crystal and a lower part 1b of the silicon seed crystal, and the two parts are connected as a whole. The upper part 1a of the seed crystal and the lower part 1b of the seed crystal are truncated cones, and the cross section of the upper part 1a of the seed crystal is larger than the cross section of the lower part 1b of the seed crystal.

[0070] The silicon seed crystal of the present invention is formed by cutting or drilling a silicon single crystal with a certain crystal orientation. The steps that concrete processing method comprises are:

[0071] 1. Select a cylindrical silicon single crystal with a certain crystal orientation, with a diameter of 130 mm.

[0072] 2. Process it into strip-shaped cylinders on a drill press, each strip is 150 mm long. Diamond grains are plated on the stain...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
diameteraaaaaaaaaa
Login to view more

Abstract

A silicon seed crystal for growing monocrystalline silicon by straight pull method is composed of an upper part whose shape may be reverse circular table, reverse prismatic table, or reverse cylindrical table, and a lower cylindrical part, and is prepared by cutting the monocrystalline silicon. When the weight of silicon crystal reaches 500 kg, and seed crystal can not be broken.

Description

technical field [0001] The invention relates to a silicon seed crystal used for preparing silicon single crystal by Czochralski method and a processing method thereof. Background technique [0002] Silicon single crystal is a semiconductor material commonly used in the manufacture of integrated circuits and other electronic components. Most semiconductor silicon single crystals are produced by the Czochralski method, and the cross-sectional schematic diagram of the single crystal furnace for producing silicon single crystals by the Czochralski method is shown in the attached figure 1 . In the silicon single crystal growth method manufactured by the Czochralski method, silicon crystals are grown in a growth chamber, and the growth chamber includes a stainless steel cylinder 8, an insulation cylinder 7, a graphite heating element 6, a quartz crucible 11, a quartz crucible supporter 10 made of graphite, etc. When growing silicon crystals, the inert gas argon is used as a prot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/36
Inventor 屠海令戴小林吴志强周旗钢张果虎万关良王学锋
Owner GRINM SEMICONDUCTOR MATERIALS CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap