Method for preparing gallium nitride single crystal film
A single crystal thin film, trimethyl gallium technology, which is applied in the field of large mismatch epitaxial growth of III-N compound thin films, can solve the problems of limiting the optoelectronic properties of GaN single crystal thin films, unable to guarantee the best conditions for GaN growth, etc. Photoelectric properties, improving crystal quality, and suppressing the generation of crystal defects
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0019] In this embodiment, a GaN single crystal film is epitaxially grown on a sapphire substrate. The method of the present invention will be described in detail below with reference to the drawings and embodiments:
[0020] 1. First, clean the figure 1 The shown substrate 10 is placed on a substrate holder of a growth chamber in a chemical vapor deposition apparatus, hydrogen gas with a purity of 99.9999% is passed into the reaction chamber, and then the substrate is heated to 1200°C;
[0021] 2. Ten minutes later, lower the temperature of the substrate 10 to 400°C, pass ammonia and trimethylgallium carried by hydrogen into the reaction chamber, and keep the ammonia flow at 3000 or 8000 ml / min, trimethylgallium The flow rate is 1-10 ml / min to grow the nucleation layer 11 with a thickness of 1nm to 500nm. The nucleation layer 11 provides the core for the subsequent GaN growth, which plays a transitional role from the substrate to the GaN layer, and high-density nucleation The ce...
Embodiment 2
[0026] In this embodiment, a GaN single crystal thin film is epitaxially grown on a heterogeneous substrate.
[0027] 1. First, clean the figure 1 The shown substrate 10 is placed on a substrate holder of a growth chamber in a chemical vapor deposition apparatus, hydrogen gas with a purity of 99.9999% is passed into the reaction chamber, and then the substrate is heated to 1200°C;
[0028] 2. After ten minutes, lower the temperature of the substrate 10 to between 500°C and 600°C, pass ammonia and trimethylgallium carried by hydrogen into the reaction chamber, and keep the ammonia flow at 5000-7000 ml / min , The trimethylgallium flow rate is 5-8 ml / min, to grow the nucleation layer 11 with a thickness of 100nm to 300nm. The nucleation layer 11 provides the core for the subsequent GaN growth and plays a transitional role from the substrate to the GaN layer. The high density of nucleation centers facilitates the subsequent growth of GaN;
[0029] 3. Stop feeding trimethylgallium into...
PUM
Abstract
Description
Claims
Application Information
- R&D Engineer
- R&D Manager
- IP Professional
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com