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A kind of conductive thin film and preparation method thereof

A technology of conductive film and inductive layer, which can be used in equipment for manufacturing conductive/semiconductor layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., and can solve problems such as poor conductivity of Ag-based conductive films

Active Publication Date: 2020-10-27
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a conductive film and a preparation method thereof, aiming at solving the problem of poor conductivity of the existing Ag-based conductive film

Method used

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  • A kind of conductive thin film and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0048] Using glass as the substrate, the glass was ultrasonically cleaned with deionized water, acetone, and ethanol for 15 minutes in advance to remove particles and organic pollutants on the substrate surface, and then dried with high-purity nitrogen to obtain a pretreated glass substrate ;

[0049] Spin-coat a layer of ZnO nanoparticle solution on the treated glass, and then heat at 80°C for 15 minutes to remove the solvent on the surface to form a ZnO layer with a thickness of 30nm;

[0050] Then spin-coat a layer of fullerene derivative PC at a concentration of 0.1 mg / mL on the ZnO layer. 61 BM solution, the solvent is chlorobenzene, and then heated at 80°C for 10 minutes to remove the solvent on the surface and form a PC with a thickness of 3nm 61 BM layer; then put the whole device into the vacuum evaporation chamber, and 61 A layer of Ag is vapor-deposited on the BM layer to form an Ag layer with a thickness of 3nm;

[0051] Finally, a layer of ZnO nanoparticle solu...

Embodiment 2

[0053] Using PEN as the substrate, the glass was ultrasonically cleaned with deionized water, acetone, and ethanol for 15 minutes in advance to remove particles and organic pollutants on the substrate surface, and then dried with high-purity nitrogen to obtain the pretreated PEN substrate ;

[0054] Spin-coat a layer of ZnO nanoparticle solution on the treated PEN, and then heat at 80°C for 15 minutes to remove the solvent on the surface to form a ZnO layer with a thickness of 30nm;

[0055] Then spin-coat a layer of fullerene derivative PC at a concentration of 0.1 mg / mL on the ZnO layer. 61 BM solution, the solvent is chlorobenzene, and then heated at 80°C for 10 minutes to remove the solvent on the surface and form a PC with a thickness of 3nm 61 BM layer; then put the whole device into the vacuum evaporation chamber, and 61 A layer of Ag is vapor-deposited on the BM layer to form an Ag layer with a thickness of 3nm;

[0056] Finally, a layer of ZnO nanoparticle solution...

Embodiment 3

[0058] Using glass as the substrate, the glass was ultrasonically cleaned with deionized water, acetone, and ethanol for 15 minutes in advance to remove particles and organic pollutants on the substrate surface, and then dried with high-purity nitrogen to obtain a pretreated glass substrate ;

[0059] Spin-coat a layer of Al-doped ZnO nanoparticle solution on the treated glass, and then heat at 80°C for 15 minutes to remove the surface solvent and form an AlZnO layer with a thickness of 30nm;

[0060] Then spin-coat a layer of fullerene derivative PC at a concentration of 0.1 mg / mL on the AlZnO layer. 61 BM solution, the solvent is chlorobenzene, and then heated at 80°C for 10 minutes to remove the solvent on the surface and form a PC with a thickness of 3nm 61 BM layer; then put the whole device into the vacuum evaporation chamber, and 61 A layer of Ag is vapor-deposited on the BM layer to form an Ag layer with a thickness of 3nm;

[0061] Finally, a layer of Al-doped ZnO ...

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Abstract

The invention discloses a conductive film and a preparation method thereof. The conductive film comprises a substrate, a first metal oxide layer, a nucleation inducing layer, a metal Ag layer and a second metal oxide layer arranged from bottom to top. The nucleation inducing layer is made of a fullerene derivative containing a carbonyl group. The problem that the existing Ag-based transparent conductive film has poor conductivity is solved.

Description

technical field [0001] The invention relates to the technical field of conductive thin films, in particular to a conductive thin film and a preparation method thereof. Background technique [0002] Today, indium tin oxide (ITO) is a transparent conductive oxide widely used in the field of optoelectronic devices, and high-performance ITO must be annealed at high temperature, so it is not compatible with organic substrates, but ITO resistors prepared at room temperature The conductivity of the conductive film is high, and the conductivity of the conductive film must be increased by increasing the thickness. With the increase of the thickness, the transmittance decreases and the brittleness of the film increases. It is easy to fail after repeated bending, and it cannot meet the requirements of flexible devices. And the sharp increase of transparent conductive film market demand has also limited the large-scale use of ITO transparent conductive film. It is replaced by a metal c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B5/14H01B13/00
CPCH01B5/14H01B13/00H01B13/0026
Inventor 李龙基曹蔚然王宇
Owner TCL CORPORATION
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