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Process for preparing polysilicon film using quasi-molecule laser annealing technology

An excimer laser, polysilicon thin film technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve the problems of small process range, machine pollution, large safety distance L1, etc., to increase the process area and avoid pollution. , the effect of increasing productivity

Inactive Publication Date: 2004-06-02
TPO DISPLAY
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Problems solved by technology

However, the setting of the process boundary 18 and the selection of the safety distance L1 are entirely judged by the operator based on personal experience, so many problems often arise. For example, in order to increase production, the safety distance L1 is too small, causing the machine to be damaged The risk of pollution is greatly increased or the safety distance L1 is too large, which makes the process range too small and affects the output

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  • Process for preparing polysilicon film using quasi-molecule laser annealing technology
  • Process for preparing polysilicon film using quasi-molecule laser annealing technology
  • Process for preparing polysilicon film using quasi-molecule laser annealing technology

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Embodiment Construction

[0023] Please refer to Figure 4 , Figure 4 It is a schematic diagram of a method for fabricating a polysilicon thin film by an excimer laser annealing process in the present invention. Such as Figure 4 As shown, first an amorphous silicon film 112 is deposited on a glass substrate 110. There are many methods for depositing the amorphous silicon film 112, such as low pressure chemical vapor deposition (LPCVD), plasma assisted chemical vapor deposition (PECVD) and sputtering. Sputtering, etc. The area and thickness of the formed amorphous silicon film 112 are not particularly limited, and can be appropriately adjusted according to product requirements. Generally speaking, its thickness is about 300 to 800 angstroms. In a preferred embodiment of the present invention, The formed amorphous silicon thin film 112 has a length of 750 mm, a width of 620 mm, and a thickness of about 500 angstroms (Å).

[0024] The amorphous silicon film 112 includes a first region 114 and a seco...

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Abstract

The invention discloses a method for making polycrystalline silicon thin film by means of quasi-molecule laser annealing process which comprises, forming a non-crystalline silicon layer on the substrate, performing thickness measurement to the non-crystalline silicon thin film, obtaining the thickness distribution near the outer rim of the non-crystalline silicon film, setting the process boundary for the quasi-molecule laser annealing process, proceeding the quasi-molecule laser annealing process within the process boundary, making the non-crystalline silicon thin film in the area recrystallize to be a polycrystalline silicon film.

Description

technical field [0001] The invention relates to a method for manufacturing polysilicon thin films, in particular to a method for manufacturing polysilicon thin films using an excimer laser annealing (ELA) process. Background technique [0002] With the rapid development of science and technology, thin, light, power-saving, and portable intelligent information products have filled our living space, and monitors have played a very important role in it. The display acts as an interface for man-machine communication. However, the amorphous silicon thin-film transistor liquid crystal display (a-TFT LCD), which has been mass-produced today, is difficult to further meet the requirements of lightness, lightness, power saving, and high image quality due to the limitation of carrier mobility. Next will be low temperature polysilicon (LTPS) thin film transistor liquid crystal displays. [0003] In liquid crystal displays, since the heat resistance of general glass substrates can only...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/324
Inventor 石储荣陆一民
Owner TPO DISPLAY
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