Supercharge Your Innovation With Domain-Expert AI Agents!

Exposure method for once scanning two common exposure areas

A kind of exposure method, scanning exposure technology

Inactive Publication Date: 2004-12-15
SHANGHAI HUA HONG GROUP +1
View PDF0 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0007] However, the disadvantage of double exposure technology is that two reticles must be used to expose the same layer twice, doubling the exposure time and halving the machine efficiency, so it will greatly reduce the output and increase the cost, which is not desirable for production; in addition Alignment issues caused by double exposures are also a concern

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Exposure method for once scanning two common exposure areas
  • Exposure method for once scanning two common exposure areas
  • Exposure method for once scanning two common exposure areas

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0018] The following example illustrates a possible implementation process of the present invention, the purpose of which is to better explain the application of the present invention, but should not be construed as a limitation of the present invention.

[0019] 1. Load the mask and perform the alignment operation;

[0020] 2. Load silicon wafer and perform alignment operation, calculate compensation amount and set relevant parameters such as scanning distance, step length, scanning origin, etc.;

[0021] 3. Scan the double area, and step into the single area to expose the whole film;

[0022] 4. Repeat 2-3 to complete the exposure of all silicon wafers.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The present invention belongs to the field of photoetching exposure technique in integrated circuit manufacture process, and is especially one kind of exposure method of scanning two common exposure areas simultaneously. Twice exposure technique is attractive for some key layer, and the present invention proposes new exposure method to raise the efficiency of twice exposure. The new exposure method is to scan two areas in once scanning, has greatly raised exposure efficiency, and may find its wide application foreground in integrated circuit manufacture.

Description

technical field [0001] The invention belongs to the photolithographic exposure technology in the integrated circuit manufacturing process, and specifically relates to a new exposure method for scanning two common exposure areas at one time. Background technique [0002] With the continuous development of integrated circuits, the minimum line width of transistors continues to shrink, and the length of transistor gates in advanced CMOS processes is close to 0.1 microns. The continuous reduction of feature line width has led to a substantial increase in chip integration, but the fine lines have brought great challenges to the optical lithography process. [0003] In order to continuously adapt to the reduction of line width and the improvement of integration, the optical lithography technology has been continuously improved: from contact exposure to proximity exposure, and then to reduced projection exposure; the wavelength of the exposure light source is from 430nm of I line t...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): G03F7/00G03F7/20H01L21/027H01L21/30
Inventor 姚峰英
Owner SHANGHAI HUA HONG GROUP
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com