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Current-perpendicular-plane configuration spin valve having one magnetic domain structure and process of preparation thereof

A planar configuration, spin valve technology, applied in the direction of magnetic recording head, manufacturing magnetic flux sensitive magnetic head, etc., can solve the problems of increasing readout energy loss, inability to read out the magnetic head, increased switching field, etc., to improve the magnetoresistance effect. , Improve the effect of magnetic structure

Inactive Publication Date: 2005-04-13
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
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  • Claims
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Problems solved by technology

However, for the CPP-SPV with the usual structure (that is, there is only one coupling layer and the pinning layer and the free layer are both cobalt or cobalt-iron alloy), the magnetoresistance is very small and cannot be directly applied to the read head.
In addition, because the usual CPP-SPV has a more complex magnetic domain structure, as the storage density increases and the size of the element decreases, the edge of the magnetic domain generates a huge demagnetization field, which greatly increases the switching field of the read head. Significantly increased readout energy consumption

Method used

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  • Current-perpendicular-plane configuration spin valve having one magnetic domain structure and process of preparation thereof

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Embodiment Construction

[0020] Ten spin valve structures were prepared in the experiment, and the specific structures are shown in the following table:

[0021]

[0022] The applicant used plasma sputtering, magnetron sputtering, and molecular beam epitaxial growth to prepare a total of 30 spin valve devices with the above ten structures. Through testing, it was found that all of the above spin valve devices are in size It can reach a single magnetic domain structure when it is 0.6×0.3 square microns, and their magnetoresistance effect at room temperature is 3 to 4 times higher than that of a spin valve with a usual structure. The results of the specific implementation strongly illustrate that the present invention can effectively improve the magnetic structure of the spin valve and greatly enhance its magnetoresistance effect at room temperature.

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Abstract

The invention provides a current-perpendicular-plane configuration spin valve having one magnetic domain structure and process of preparation thereof, wherein the spin valve comprises a base electrode layer, an anti-ferromagnetic layer, a cobalt or ferro-cobalt alloy, a metal ruthenium layer, a metal copper layer and a top electrode layer.

Description

Technical field [0001] The invention belongs to the field of magnetic storage technology, and in particular provides a spin valve structure with a single magnetic domain structure current perpendicular to a plane configuration and a preparation method thereof. The spin valve has a high room temperature magnetoresistance effect and can be used in the next generation. The application of ultra-high storage density computer hard disk. Background technique [0002] At present, in the widely used electronic computer technology, the storage of information is mainly realized through the computer hard disk. Therefore, as one of the key components of the computer hard disk, the read head of the hard disk plays a decisive role in the storage density of the hard disk. In today's computer hard disks, the "read" process uses a spin valve (hereinafter referred to as CIP-SPV) head with a current parallel to the plane configuration. With the application of the special dual-spin valve launched by ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G11B5/39
Inventor 姜勇于广华王燕斌
Owner UNIV OF SCI & TECH BEIJING
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