Manufacturing method and device of silicon-based planar triode device

Abstract

The invention discloses a silicon-based planar transistor device manufacturing method and a device. The silicon-based planar transistor device manufacturing method comprises a step in which boron ions and phosphorus ions are doped respectively on the upper surface and the lower surface of a wafer, and thus, a planar transistor with a p+-n-n+ structure is formed. The invention also discloses a basic principle and an idea by using the silicon-based planar transistor device to acquire large magnetoresistance effects in a low magnetic field.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for manufacturing a silicon-based planar triode device and the device, so as to achieve a large magnetoresistance effect under a low magnetic field. Background technique [0002] In the past 50 years, the development of the world's semiconductor industry has been following the famous Moore's Law, that is, the number of transistors on a chip doubles every 18 to 24 months. However, due to the limitation of physical volume, according to Moore's Law, the development of the semiconductor industry will approach the limit in the next ten years, and the performance of traditional transistor circuits cannot be further improved. How to make semiconductor devices surpass the limitation of Moore's Law has become an important problem to be solved urgently in the semiconductor industry today. [0003] Realizing the magnetic regulation of semiconductor devices not only endows traditional...

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Problems solved by technology

Although the Lorentz force can be used to control the transport properties of semiconductor devices by magnetic fields, it is much more difficult to achieve magnetic manipulation in semiconductor materials than in magnetic materials because it is usually canceled by the Hall electric field.

[0004] At present, people are starting from narrow-band semiconductors (Ag 2 Te, InSb, etc.) to traditional semiconductors (Si, Ge, etc.) have reported large magnetoresistance effects that are much larger than current magnetic materials, but it is not difficult to see that people use Lorentz force to manipulate charges in essence, so the required The working magnetic field is usually very high, and it takes several or even more than ten tesla to obtain considerable effects

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