Transistor structure with thermal protection function

Abstract

Structure of the disclosed transistor comprises primary N type metal oxide semiconductor (MOS) transistor, secondary P type MOS transistor and thermal protection unit. Drain pole and grid pole of P type MOS transistor are connected to grid pole of N type MOS transistor and thermal protection unit. Integral architecture of the two transistors is similar to N type MOS transistor. Source pole of P type MOS transistor is as grid pole of the disclosed transistor. Drain pole and source pole of the N type MOS transistor are as drain pole and source pole of the disclosed transistor. Based on sensing quantity of heat, interrupting current passing through transistors, and turning on / off transistor, the thermal protection unit prevents failures occurred in the two MOS transistors of the disclosed transistor caused by heat.

Description

(1) Technical field [0001] The present invention relates to a Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) device, and in particular to a transistor structure with thermal protection function. (2) Background technology [0002] Metal-oxide-semiconductor field-effect transistors (hereinafter referred to as metal-oxide-semiconductor transistors) overheat or burn out problems often occur in many different electronic applications and operating conditions. Normally, MOS transistors can operate at a junction temperature of 150 degrees Celsius, but if the internal thermal energy raises the temperature to more than 300 degrees Celsius, the MOS transistor may overheat or burn out . Heat can be transferred by conduction, convection or radiation. The temperature changes encountered during fabrication, storage, and operation of MOS transistor devices are generally not large enough to limit the characterization and lifetime of the device if the circuit design is good. Ho...

AI Technical Summary

Problems solved by technology

Because the metal-oxide-semiconductor transistor element burns out first, and then the circuit becomes a short circuit or an open circuit, the traditional open circuit or short circuit test may not correctly identify the cause of the circuit failure

Third, soldering the thermal fuse very close to the component to be protected or performing a reflow soldering process can easily damage the component

All in all, the use of a thermal fuse affects the cost, size, conductor contact condition, etc. of the metal-oxide-semiconductor transistor component, and causes the aforementioned disadvantages

[0007] Thermal protection of metal-oxide-semiconductor transistor components cannot be effectively achieved using thermal fuses for the reasons described above.

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