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Semiconductor integrated circuit, logic operation circuit, and flip flop

A logic operation circuit and integrated circuit technology, applied in semiconductor devices, semiconductor/solid-state device manufacturing, circuits, etc., can solve problems such as unsatisfactory power consumption, and achieve the effects of shortening restart time, reducing leakage current, and reducing power consumption

Inactive Publication Date: 2005-05-25
KK TOSHIBA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, if Figure 9 As shown, when a part of the cell is constituted by a transistor with a low threshold voltage, since the leakage current flows to the cell during standby, it cannot meet the requirement of reducing the power consumption during standby as much as possible like a mobile phone.

Method used

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  • Semiconductor integrated circuit, logic operation circuit, and flip flop
  • Semiconductor integrated circuit, logic operation circuit, and flip flop
  • Semiconductor integrated circuit, logic operation circuit, and flip flop

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Embodiment Construction

[0033] Hereinafter, the semiconductor integrated circuit of the present invention will be specifically described with reference to the drawings.

[0034] (Embodiment 1)

[0035] Embodiment 1 is to use transistors with high threshold voltages to form most of the gate circuits in the semiconductor integrated circuit, and only a part of the gate circuits are composed of SMT-CMOS (Selective Transistors) that combine transistors with high threshold voltages and transistors with low threshold voltages. MultipleThreshold voltage CMOS, select the multi-threshold voltage CMOS) circuit method, and realize the embodiment of high-speed signal transmission speed and low power consumption. Hereinafter, a gate circuit formed by combining a transistor with a high threshold voltage and a transistor with a low threshold voltage is called an MT gate unit (multi-threshold voltage gate unit).

[0036] figure 1 It is a circuit diagram of Embodiment 1 of the semiconductor integrated circuit of th...

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PUM

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Abstract

Provide semiconductor integrated circuits, logic operation circuits, and flip-flops that can operate at high speed and have low leakage current. In the semiconductor integrated circuit of the present invention, only the gate circuit 1 on the critical path is constituted by an MT gate circuit unit combining a transistor with a low threshold voltage and a transistor with a high threshold voltage, and gate circuits 1 with a high threshold voltage are used for other gate circuits 1 Transistors make up. With this, the gate circuit 1 on the critical path can be operated at high speed, and the overall leakage current can be suppressed, thereby reducing power consumption.

Description

[0001] This application is a divisional application of an invention patent application filed by Toshiba Corporation on June 20, 2001 with the application number 01121646.8 and the invention title "semiconductor integrated circuit, logical operation circuit and trigger". technical field [0002] The present invention relates to a semiconductor integrated circuit, a logic operation circuit and a flip-flop formed by combining multiple transistors, in particular to the technology of reducing power consumption and increasing signal transmission speed. Background technique [0003] In order to increase the speed of CMOS logic circuits, it is necessary to configure circuits with transistors with low threshold voltages. However, there is a problem that the lower the threshold voltage of the transistor is, the larger the leakage current is during standby. In order to avoid this problem, an MT-CMOS (Multiple Threshold voltage CMOS, multiple threshold voltage CMOS) circuit that can si...

Claims

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Application Information

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IPC IPC(8): H01L27/04H01L21/822H03K19/00H03K19/017H03K19/096H03K19/20
CPCH03K19/0016H03K19/01707H03K19/00
Inventor 座间英匡小泉正幸伊东由纪子字佐美公良河边直之金沢正博古泽敏行
Owner KK TOSHIBA
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