Substrate processing device and substrate processing method

Abstract

A substrate processing device and a substrate processing method for general purpose capable of suppressing the contamination of atmosphere in a processing chamber through carriers, continuously performing a stable conveyance and a high quality substrate processing, and coping with further upsizing substrates and various substrate dimensions, the device comprising a load lock chamber allowing the carriers having the substrate mounted thereon to be carried therein, a substrate transfer chamber having a transfer mechanism for transferring the substrate between the carriers, and a substrate processing chamber for applying a specified processing to the substrate, characterized in that the first carrier moves between the load lock chamber and the substrate transfer chamber and the second carrier moves between the substrate transfer chamber and the substrate processing chamber, and the substrate is transferred between the first carrier and the second carrier by the transfer mechanism.

Description

technical field [0001] The present invention relates to a substrate processing apparatus and processing method, which continuously transports a carrier loaded with a substrate to a processing chamber and performs predetermined processing, and particularly relates to processing that can solve the problem caused by the movement of the carrier between the processing chamber and the atmosphere The problem of contamination of the chamber environment can be avoided, and the formation of high-quality thin films and etching can be performed stably. Background technique [0002] As a known example of a substrate processing apparatus, for Figure 7 The production is illustrated with a vapor deposition apparatus for illustration. Such as Figure 7 As shown, in the known vapor deposition apparatus, a load-lock vacuum chamber (Lo-Dock) 10 for carrying in a carrier, a heating chamber 70, a vapor deposition chamber 30, a load-lock vacuum chamber 10' for carrying out a carrier, etc. , are ...

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Problems solved by technology

In the research, it was found that an evaporation device has been developed. The structure of the device is to cover the carrier with a shield when the film is formed to prevent the film from adhering to the carrier, and the shield is not taken out but left in the vacuum chamber ( Japanese Patent Laid-Open Publication No. 11-131232), this device and Figure 7 Compared with the device structure shown, although it has been improved, it is still not enough to support high-precision, high-performance large-scale PDPs

For example, if the opening of the shield is larger than the opening of the carrier, the thin film will adhere to the carrier, causing the same problem as above, while if the opening of the shield is small, the evaporation material will flow to the outer periphery of the substrate and accumulate, resulting in The film thickness is thin and the crystal planes are mixed, resulting in the problem of uneven brightness

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