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Organic electroluminescence device

A technology of organic light-emitting elements and inorganic thin film layers, which can be used in household components, electrical components, light-emitting materials, etc., and can solve problems such as low ability to hold electrons

Inactive Publication Date: 2005-09-21
IDEMITSU KOSAN CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] As an inorganic semiconductor used in an inorganic semiconductor layer, Si 1-x C x , CuI, CuS, GaAs, ZnTe, Cu 2 O, Cu 2 S, CuSCN, CuCl, CuBr, CuInSe 2 、CuInS 2 、CuAlSe 2 , CuGaSe 2 , CuGaS 2 , GaP, NiO, CoO, FeO, Bi 2 o 3 、MoO 2 、Cr 2 o 3 etc., but the energy gap (energy gap) of these is 2.5-2.6eV or less, there is no electron shielding property, and the ability to retain electrons in the light-emitting layer is low, so improvement is required.

Method used

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  • Organic electroluminescence device
  • Organic electroluminescence device
  • Organic electroluminescence device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0190] A 120-nm-thick transparent electrode film made of ITO was formed as an anode layer on a transparent glass substrate having a thickness of 1.1 mm, a length of 25 mm, and a width of 75 mm. Hereinafter, the glass substrate and the anode layer are collectively referred to as a substrate.

[0191] Then, the substrate was ultrasonically cleaned with isopropanol, and then 2 After drying in a (nitrogen) atmosphere, it was washed with UV (ultraviolet ray) and ozone for 10 minutes.

[0192] Then, the substrate was arranged in a tank of a sputtering apparatus, and a target (composition ratio 10:1) composed of tin oxide and ruthenium oxide (composition ratio 10:1) constituting the inorganic thin film layer was set in the tank.

[0193] Furthermore, an inorganic thin film layer is formed in a sputtering apparatus. In sputtering gas, Ar: 30sccm, O 2 : 5sccm, substrate temperature: 120°C, film formation speed 1nm / min, operating pressure 0.2-2Pa, and input power 300W, sputtering is ...

Embodiment 2

[0202] When forming an inorganic thin film layer, in addition to using GeO 2 A device was produced in the same manner as in Example 1 except for the target. Au particles of a predetermined size were arranged on this target to form a high-resistance inorganic hole injection layer with a film thickness of 7 nm.

[0203] The sputtering gas at this time is Ar: 30 sccm, O 2 : 5 sccm, room temperature (25°C), film formation rate 1nm / min, operating pressure 0.2-2Pa, input power 500W.

Embodiment 3

[0205] An element was produced in the same manner as in Example 1, except that a target composed of Si oxide and Ir oxide (composition ratio 10:1) was used for producing the inorganic thin film layer. An inorganic thin film layer with a film thickness of 7 nm was formed.

[0206] The sputtering gas at this time is Ar: 30 sccm, O 2 : 10sccm, at room temperature, film formation rate 1nm / min, operating pressure 0.2-2Pa, input power 400W.

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Abstract

An organic luminescence device including an anode (1); an insulating or semiconductive inorganic thin film layer (3) having an energy gap of 2. 7 eV or more; an organic compound layer (4) comprising one or more layers which include at least an organic emitting layer, at least one of the layers including an ortho-metallized metal complex; and a cathode (2) in order of the description of these members. The formation of the inorganic thin film layer (3) improves the injection of holes into the emitting layer, and the addition of the ortho-metallized metal complex permits the use of triplet excitons. Therefore, the light emitting efficiency, luminance and lifespan thereof are improved.

Description

technical field [0001] The present invention relates to an organic light-emitting element, in particular to an organic electroluminescence element. Background technique [0002] Organic light-emitting elements are expected to be used in various applications such as displays, backlights for LCDs, light sources for lighting, light sources for optical communications, and read / write heads for information files, and active research and development has been conducted in recent years. [0003] Generally, an organic electroluminescence element (hereinafter referred to as an organic EL element) is composed of an organic compound layer having a film thickness of 1 μm or less and two electrodes sandwiching the organic compound layer. The organic light-emitting element is a self-luminous element. By applying a voltage between two electrodes, electrons generated from one electrode (cathode) and holes generated from the other electrode (anode) are recombined in the organic compound layer ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03B33/14H01L51/50
CPCH01L51/5088H01L51/5016H10K50/17H10K50/11H10K2101/10C09K11/06C09K2211/18Y10S428/917
Inventor 细川地潮松浦正英岩隈俊裕井上一吉
Owner IDEMITSU KOSAN CO LTD