Method and apparatus for producing uniform processing rates

Abstract

An antenna arrangement for generating an rf field distribution at a plasma generating region inside a chamber wall of a process chamber of a plasma processing apparatus is described. The antenna arrangement includes an rf inductive antenna to which an rf power supply can be connected to supply an rf current to generate a first rf field extending into the plasma generating region. A passive antenna is also provided which is inductively coupled to the rf inductive antenna and configured to generate a second rf field modifying the first rf field. The rf field distribution at the plasma generating region increases the processing uniformity of the processing apparatus compared to that in the absence of the passive antenna.

Description

Background of the invention [0001] The present invention generally relates to apparatus and methods for processing substrates, including semiconductor substrates for integrated circuit fabrication or glass sheets for flat panel display applications. More specifically, the present invention relates to improved plasma processing systems capable of processing substrates with high process uniformity across the substrate surface. [0002] Plasma processing systems have been around for some time. Plasma processing systems using inductively coupled plasma sources, electron cyclotron resonance (ECR) sources, capacitive sources, or the like have been introduced and used to varying degrees over the years to process various objects, such as semiconductor substrates and glass plate. [0003] In processing, multiple deposition and / or etching steps are typically used. During deposition, material is deposited onto a substrate surface (such as the surface of a glass plate or wafer). For e...

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Problems solved by technology

Even if the RF field in the plasma region is perfectly symmetrical, if the wafer is not properly aligned, or if there is a difference in the RF field distribution between the plasma generation region and the surface of the workpiece, it will result in plasma processing of the workpiece uneven

[0013] Therefore, regardless of the improvement of the symmetry of the electromagnetic field generated by the antenna, there may still be large inhomogeneities in the plasma treatment on the wafer surface, and even a completely symmetrical electromagnetic field distribution in the plasma chamber does not guarantee a good effect on the wafer. Etching is completely uniform

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