Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Method for preparing nano zinc oxide tube by assistance of radiofrequency plasma

A radio frequency plasma, zinc oxide nanotube technology, applied in zinc oxide/zinc hydroxide, nanotechnology, nanotechnology and other directions, can solve the problem of not finding ZnO nanotubes, and achieve the effect of avoiding interference

Inactive Publication Date: 2005-11-16
CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
View PDF0 Cites 10 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] So far, no reports have been found on the preparation of ZnO nanotubes without using templates or catalysts

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] Embodiment 1 Growth of ZnO nanotubes on a sapphire substrate

[0017] When growing ZnO nanotubes, the cleaned sapphire Al 2 o 3 The substrate is glued to the surface of the molybdenum holder with high-purity indium and placed on the sample holder. Use a mechanical pump, a molecular pump, and an ion pump to evacuate the backside of the growth chamber to 10 -7 Below Pa, the chemically treated sapphire substrate (Al 2 o 3 ) to 750°C to degas for 30 minutes. The vapor pressure of the Zn source is 4×10 -4 Pa, oxygen partial pressure is 6×10 -3 Pa, substrate temperature Treat the substrate surface with a plasma power of 300W at 550°C for 30 minutes to obtain a fresh surface. After opening the ion trap to grow ZnO with a thickness of 5nm, turn off the Zn source and the ion trap, treat the ZnO with plasma for 30 minutes, and then turn on the EIT to grow ZnO for 2 hours.

[0018] Utilizing the invention, high-quality ZnO nanotubes are prepared on the sapphire substrate. ...

Embodiment 2

[0019] Embodiment 2 Growth of ZnO nanotubes on a silicon substrate

[0020] Use mechanical pumps, molecular pumps and ion pumps to vacuum the back of the growth chamber to less than 10 -7 Pa, the chemically treated silicon substrate (Si) was heated to 750° C. to degas for 40 minutes. The vapor pressure of the Zn source is 5×10 -4 Pa, the substrate temperature is 550°C, after opening the ion trap to grow ZnO with a thickness of 5nm, turn off the Zn source and ion trap, treat ZnO with plasma for 30 minutes, and then turn on EIT to grow ZnO for 2 hours.

[0021] The invention realizes the growth of ZnO nanotubes on the silicon (111) substrate. In the XRD diffraction spectrum, only the (001) diffraction peak can be observed. The high-resolution field emission microscope shows that the obtained nanotubes grow preferentially vertically, the angle between the growth direction and the normal direction of the silicon substrate is ±30°, and the angle is 100 nanometers, and the outer ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

ZnO layer with thickness of 1-8nm is developed on sapphire substrate or silicon substrate through plasma in radio frequency assistant molecular beam epitaxy device. Detection and control are carried out for gas flow by using flowmeter and leakage valve on the said molecular beam epitaxy device. When ion capture trap is opened, only, neutral particles are allowed to enter into development room; and when closed, plasma enters into the development room. Since different stabilities of polar surface and nonpolar surface of ZnO, initialized Nano rings in ZnO are formed on surface of substrate. Then, ZnO is developed along ring so as to form Nano tube. The invention develops orientated ZnO Nano tube in high quality without need of introducing catalyst or template.

Description

technical field [0001] The invention belongs to the technical field of semiconductor materials and relates to the preparation of zinc oxide nanotubes, in particular to a method for preparing zinc oxide nanotubes assisted by radio frequency plasma. Background technique [0002] In recent years, due to their unique electronic structure and physical and chemical properties, low-dimensional semiconductor materials have become a hot spot in the international frontier topics in the current research field, especially since the discovery of carbon nanotubes (CNTs) by Iijima of Japan's NEC Corporation in 1991 and mass production Since (Nature, 1991, 354: 56), many researchers in the world have devoted themselves to the research on the performance and application of this new material. At present, carbon nanotubes are generally prepared by template or catalyst methods, and the extraction of pure nanotubes inevitably exists in the above methods. Moreover, because the thermal stability ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L21/20
Inventor 吕有明梁红伟申德振张振中刘益春张吉英范希武
Owner CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com