Method for manufacturing CMOS image sensor

Abstract

The present invention provides a method of manufacturing a CMOS image sensor. The method includes forming a gate electrode on a semiconductor layer defining a photodiode region and a logic region, interposing a gate oxide film between the semiconductor layer and the gate electrode; forming sidewall insulating films on both sides of the gate electrode, and then forming a salicide protective film on the entire surface of the insulating film; removing the salicide protective film formed in the logic region; and removing the sidewall insulating film exposed by removing the salicide protective film. part, thereby exposing the upper side surface of the gate electrode.

Description

[0001] This application claims priority from Korean Patent Application No. 10-2004-0042207 filed on Jun. 9, 2004, the entire contents of which are incorporated herein by reference. technical field [0002] This application relates generally to image sensors, and in particular to methods of fabricating complementary metal-silicon-oxide (CMOS) image sensors that prevent dark current generation. Background technique [0003] An image sensor is a semiconductor device that converts an optical image into an electrical image, and can be a CMOS image sensor or a charge-coupled device (CCD). A number of individual metal oxide silicon (MOS) capacitors capable of storing and transporting charge carriers are placed in close proximity to each other to form a charge coupled device. A CMOS image sensor is a device that uses a control circuit and a signal processing unit as peripheral circuits. It has MOS transistors formed respectively corresponding to pixels through CMOS technology, and u...

AI Technical Summary

Problems solved by technology

[0004] Disadvantages of the known charge-coupled devices are: complex driving methods, high power consumption, complex manufacturing process due to many mask processes, and manufacturing of a single chip CCD due to impeding the design of signal processing circuits that can be implemented in such a chip. Difficulties

However, with conventional methods, the semiconductor layer in the photodiode may be damaged during the over-etch process, causing dark current

Images