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A method of manufacturing a semiconductor wafer

一种晶片、单晶的技术，应用在制备晶片领域，能够解决不适用异质外延层、不容易获得、价格昂贵等问题

Active Publication Date: 2006-01-18
SOITEC SA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Such substrates are usually not easily available, so they are expensive and not suitable for the preparation of heteroepitaxial layers

Method used

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  • A method of manufacturing a semiconductor wafer
  • A method of manufacturing a semiconductor wafer
  • A method of manufacturing a semiconductor wafer

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Experimental program
Comparison scheme
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Embodiment Construction

[0030] figure 1 is a process diagram of the first embodiment of the present invention.

[0031] Step 101 involves wafer slicing or wafer dicing from a single crystal ingot, resulting in slices or wafers of specified thickness and warpage. Wafers can be sliced ​​using, for example, an internal diameter blade or rubbed through the ingot by a wire saw using a refined, high tension steel wire carrying an abrasive as the media. Ingots and sliced ​​wafers are preferably silicon, but may also be other single crystal materials such as germanium.

[0032] Referring to step 102, among the sliced ​​wafers in step 101, at least one wafer 1 is ground and / or ground. Grinding may involve edge grinding, using a diamond wheel to round the edge of the wafer, such as figure 2 As shown in , a diamond disc wheel grinds the edge of a sliced ​​or diced wafer 1 .

[0033] exist figure 1 In step 102 of the wafer 1, the wafer 1 may also be ground between two lapping pads to remove physical irregu...

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Abstract

The present invention relates to a method of manufacturing a semiconductor wafer that includes providing a substrate of a single crystalline first material that has an unfinished or rough surface, and epitaxially growing at least one layer of a second material directly on the unfinished or rough surface of the first material. The second material has a lattice that is different from that of the first material and the epitaxial growing of the second material is advantageously performed before a final surface finishing step on the unfinished or rough surface of the substrate to increase bonding between the materials.

Description

technical field [0001] The invention relates to a method for preparing a wafer comprising a substrate of a single crystal first material and at least one layer of a second material which is epitaxially grown on the first material and which has a different lattice. Background technique [0002] Heteroepitaxial layers, such as silicon-germanium layers (SiGe), grown on single-crystal substrates, such as silicon, are increasingly used in a variety of applications in semiconductor technology. However, due to the difference in crystal lattice between the base material and the heteroepitaxial growth layer, mismatches and accompanying mismatch dislocations are caused during the growth of the heteroepitaxial layer. [0003] One way to make defect-free heteroepitaxial layers is to grow a graded buffer layer of SiGe on a Si substrate, where the percentage of Ge in the SiGe layer gradually increases from the substrate and can be increased to 100% or 100% germanium percentage below. H...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20H01L21/302C30B25/02C30B25/18H10N60/01
CPCH01L21/0245H01L21/0251H01L21/02546C30B25/183C30B25/02H01L21/02532H01L21/2003H01L21/02008H01L21/02381H01L21/20
Inventor 克里斯托夫·马勒维尔埃马纽埃尔·阿雷纳
Owner SOITEC SA